Datasheet > CED51A3

CED51A3

更新时间： 2024-01-02 08:01:23

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	144K
描述
N-Channel Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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CED51A3 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

CED51A3 数据手册

CED51A3/CEU51A3

Electrical Characteristics T = 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^b

BV_DSS

I_DSS

V_GS= 0V, I_D= 250µA

V_DS= 30V, V_GS= 0V

V_GS= 20V, V_DS= 0V

V_GS= -20V, V_DS= 0V

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= 250µA

VGS = 10 V, ID = 17.5A

VGS = 4.5V, ID = 17.5A

V_DS= 15 V, I_D= 17.5A

mΩ

On-Resistance

Forward Transconductance

Dynamic Characteristics ^c

Input Capacitance

C_iss

C_oss

C_rss

1510

280

V_DS= 25V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^c

Turn-On Delay Time

125

t_d(on)

t_r

t_d(off)

t_f

V_DD=15V , I_D= 17.5A,

V_GS= 4.5V, R_GEN= 4.7Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

3.7

V_DS= 24V, I_D= 35A,

V_GS= 5V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage ^b

I_S

V_SD

V_GS= 0V, I_S= 35A

1.3

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

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