Datasheet > CED21A3

CED21A3

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	48K
描述
30V N Channel MOS

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CED21A3 数据手册

CED21A3/CEU21A3

ELECTRICAL CHARACTERISTICS (T

=25 C unless otherwise noted)

Typ Max

Parameter

Condition

Min

Unit

Symbol

DRAIN-SOURCE DIODE CHARACTERISTICS ^a

Diode Forward Voltage

GS = 0V, Is = 12A

0.9

1.3

Notes

a.Pulse Test:Pulse Width 300ĳs, Duty Cycle 2%.

b.Guaranteed by design, not subject to production testing.

VGS=10,9,8,7,6V

25 C

VGS=5V

VGS=4V

-55 C

Tj=125 C

V^GS=3V

0.5

1.0

1.5

2.0

2.5

3.0

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

1.80

600

I^D=12A

VGS=10V

500

400

300

200

1.60

1.40

1.20

Ciss

Coss

1.00

100

0.80

0.60

Crss

100

125 150

-50 -25

VDS, Drain-to Source Voltage (V)

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation with

Temperature

Figure 3. Capacitance

6-59

1 234 5

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