Datasheet > CED21A3

CED21A3

更新时间： 2022-01-18 18:38:00

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
5页	48K
描述
30V N Channel MOS

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数据手册

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CED21A3 数据手册

CED21A3/CEU21A3

Nov. 2002

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

30V , 20A , RDS(ON)=45m @VGS=10V.

Ω

DS(ON)=70m @VGS=4.5V.

Ω

Super high dense cell design for extremely low R^DS(ON)

High power and current handling capability.

TO-251 & TO-252 package.

CEU SERIES

TO-252AA(D-PAK)

CED SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

VGS

Gate-Source Voltage

Drain Current-Continuous

-Pulsed

Drain-Source Diode Forward Current

Maximum Power Dissipation

@Tc=25 C

Derate above 25 C

0.25

W/ C

Operating and Storage Temperature Range

, TSTG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

C/W

įJC

4.0

RįJA

6-57

12 3 4 5

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