Datasheet > CED20N06

CED20N06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	125K
描述
N-Channel Enhancement Mode Field Effect Transistor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CED20N06 数据手册

CED20N06/CEU20N06

V_GS=10,8,6,5V

25 C

_GS=4V

_GS=3V

T_J=125 C

-55 C

VDS, Drain-to-Source Voltage (V)

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

2.6

2.2

1.8

1.4

1.0

0.6

0.2

1200

I_D=20A

V_GS=10V

1000

800

600

400

200

iss

oss

rss

-100

-50

100

150

200

VDS, Drain-to-Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance

Figure 4. On-Resistance Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V_DS=V_GS

I_D=250µA

_GS=0V

10¹

10⁰

10^-1

-50 -25

25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

TJ, Junction Temperature( C)

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

6 - 32

1 234

中文翻译

下载PDF

与CED20N06相关器件

型号	品牌	描述	获取价格	数据表
CED20P06	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CED2182	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CED21A2	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格
CED21A3	ETC	30V N Channel MOS	获取价格
CED2303	CET	P-Channel Enhancement Mode Field Effect Transistor	获取价格
CED25N15L	CET	N-Channel Enhancement Mode Field Effect Transistor	获取价格