Datasheet > CED12N10_08

CED12N10_08

更新时间： 2022-10-21 01:01:58

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管
页数	文件大小	规格书
4页	412K
描述
N-Channel Enhancement Mode Field Effect Transistor

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数据手册

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CED12N10_08 数据手册

CED12N10/CEU12N10

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 11A, R_DS(ON)= 180mΩ @V_GS= 10V.

Super high dense cell design for extremely low R_DS(ON)

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

CEU SERIES

TO-252(D-PAK)

CED SERIES

TO-251(I-PAK)

ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Units

Drain-Source Voltage

100

Gate-Source Voltage

±20

Drain Current-Continuous

Drain Current-Pulsed ^a

I_DM

Maximum Power Dissipation @ T_C= 25 C

- Derate above 25 C

P_D

0.29

-55 to 175

W/ C

Operating and Store Temperature Range

TJ,Tstg

Thermal Characteristics

Parameter

Symbol

RθJC

Limit

3.5

Units

C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

Rev 3. 2008.Oct.

Details are subject to change without notice .

http://www.cetsemi.com

12 3 4

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