Datasheet > CED10P10

CED10P10

更新时间： 2022-05-13 15:25:36

品牌	Logo	应用领域
华瑞 - CET		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	389K
描述
P-Channel Enhancement Mode Field Effect Transistor

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CED10P10 数据手册

CED10P10/CEU10P10

Electrical Characteristics T_A= 25 C unless otherwise noted

Parameter

Off Characteristics

Symbol

Test Condition

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics ^c

BV_DSS

I_DSS

V_GS= 0V, I_D= -250µA

V_DS= -100V, V_GS= 0V

V_GS= 30V, V_DS= 0V

V_GS= -30V, V_DS= 0V

-100

-1

µA

I_GSSF

IGSSR

100

-100

Gate Threshold Voltage

Static Drain-Source

V_GS(th)

R_DS(on)

g_FS

V_GS= V_DS, I_D= -250µA

V_GS= -10V, I_D= -4A

-2

-4

mΩ

300

3.5

350

On-Resistance

Forward Transconductance

Dynamic Characteristics ^d

Input Capacitance

V_DS= -40V, I_D= -4A

C_iss

C_oss

C_rss

575

120

V_DS= -25V, V_GS= 0V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics ^d

Turn-On Delay Time

t_d(on)

t_r

t_d(off)

t_f

V_DD= -50V, I_D= -8A,

V_GS= -10V, R_GEN= 25Ω

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

V_DS= -80V, I_D= -8A,

V_GS= -10V

Gate-Source Charge

Q_gs

Q_gd

Gate-Drain Charge

6.0

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current ^b

Drain-Source Diode Forward Voltage ^c

I_S

-8

V_SD

V_GS= 0V, I_S= -8A

-1.5

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

123 4

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