Datasheet > CDSV21H-G

CDSV21H-G

更新时间： 2024-09-30 01:25:47

品牌	Logo	应用领域
上华 - COMCHIP		二极管
页数	文件大小	规格书
4页	97K
描述
SMD Switching Diode

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中文翻译

获取价格

技术参数
数据手册

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CDSV21H-G 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.75
二极管类型：	RECTIFIER DIODE	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

CDSV21H-G 数据手册

SMD Switching Diode

CDSV21H-G

RoHS Device

Features

- Fast switching speed

SOD-323

- High voltage switching Diode

- Designed for surface mount application

0.068(1.73)

0.066(1.68)

- Plastic material-UL recognition flammability

Classification 94V-0

0.052(1.33)

0.050(1.28)

0.014(0.35)

0.010(0.25)

0.106(2.70)

0.102(2.60)

Mechanical data

- Case: SOD-323, Molded Plastic

- Terminals: Solderable per MIL-STD-202, Method 208

- Weight: 0.004 grams(approx.)

0.004(0.10)

0.001(0.02)

0.035(0.90)

0.031(0.80)

0.004(0.10)

0.001(0.02)

0.015(0.37)

0.011(0.27)

Circuit Diagram

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

250

Unit

Continuous reverse voltage

VRRM

Repetitive peak reverse voltage

250

Forward continuous current

Peak forward surge current

Power dissipation

200

°C/W

°C

IFSM

625

200

Thermal resistance junction to ambient

Junction temperature range

Storage temperature range

RθJA

635

-55 ~ +150

TSTG

°C

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Reverse breakdown voltage

IR=100µA

IF=100mA

IF=200mA

VR=200V

V(BR)R

250

1000

1250

0.1

Forward voltage

Reverse voltage leakage current

μA

VR=200V , Tj=150°C

VR=0V , f=1.0MHz

100

Diode Capacitance

trr

Reverse recovery time

IF=IR=30mA , RL=100Ω

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-B0056

Comchip Technology CO., LTD.

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中文翻译

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