Datasheet > CDSV3-202N-G_12

CDSV3-202N-G_12

更新时间： 2024-09-29 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		小信号开关二极管
页数	文件大小	规格书
2页	72K
描述
Small Signal Switching Diodes

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中文翻译

获取价格

数据手册

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CDSV3-202N-G_12 数据手册

Small Signal Switching Diodes

CDSV3-202N-G/202P-G

Reverse Voltage: 80 Volts

Power Dissipation: 200 mW

RoHS Device

SOT-323

Features

-Design for mounting on small surface.

0.087(2.20)

0.070(1.80)

-High speed switching.

0.054(1.35)

0.045(1.15)

-High mounting capability, strong surge

withstand, high reliability.

0.056(1.40)

0.047(1.20)

Mechanical data

0.006(0.15)

0.002(0.05)

-Case: SOT-323, molded plastic.

0.087(2.20)

0.078(2.00)

0.044(1.10)

0.035(0.90)

-Terminals: solderable per MIL-STD-750,

method 2026.

-Approx. weight: 0.006 grams

0.004(0.10)max.

0.004(0.10)min.

0.016(0.40)

0.008(0.20)

Circuit diagram

Dimensions in inches and (millimeter)

CDSV3-202P-G

CDSV3-202N-G

Maximum Ratings and Electrical Characteristics

(at Ta=25 ^OC unless otherwise noted)

Parameter

Symbol

Conditions

Value

Units

Repetitive peak reverse voltage

Reverse voltage

VRRM

Peak forward current

300

Peak surge forward current

Power dissipation

IFSM

T=1.0 sec

200

Maximum forward voltage

Maximum reverse current

Maximum reverse recovery time

Maximum diode capacitance

Maximum junction temperature

Storage temperature

@IF=100mA

1.2

@VR=70V

0.1

μA

^OC

Trr

IF=IR=5mA, VR=6V

VR=6V, f=1.0MHz

3.5

150

TSTG

-55 to +150

REV:A

Page 1

QW-B0003

Comchip Technology CO., LTD.

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