Datasheet > CDSV3-16-G_12

CDSV3-16-G_12

更新时间： 2024-09-29 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		小信号开关二极管
页数	文件大小	规格书
4页	106K
描述
Small Signal Switching Diodes

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中文翻译

获取价格

数据手册

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CDSV3-16-G_12 数据手册

COMCHIP

Small Signal Switching Diodes

CDSV3-16-G/56-G/70-G/99-G

Reverse Voltage: 75 Volts

Forward Current: 300 mA

RoHS Device

SOT-323

Features

-Design for mounting on small surface.

0.087(2.20)

0.079(2.00)

-High speed switching.

-High mounting capability, strong surge

withstand, high reliability.

0.053(1.35)

0.045(1.15)

Mechanical data

-Case: SOT-323, molded plastic.

0.055(1.40)

0.047(1.20)

0.006(0.15)

0.003(0.08)

-Terminals: solderable per MIL-STD-750,

method 2026.

-Approx. weight: 0.006 grams

0.096(2.45)

0.085(2.15)

0.039(1.00)

0.035(0.90)

Circuit diagram

0.004(0.10)max.

0.016(0.40)

0.008(0.20)

0.018(0.46)

0.010(0.26)

CDSV3-16-G

CDSV3-99-G

CDSV3-70-G

CDSV3-56-G

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

(at Ta=25°C unless otherwise noted)

Parameter

Symbol

Conditions

Value

Units

Repetitive peak reverse voltage

Reverse voltage

VRRM

Forward current

300

Peak surge forward current

Power dissipation

IFSM

T=1.0 μS

200

@IF=1mA

0.715

0.855

1.0

@IF=10mA

@IF=50mA

@IF=150mA

Maximum forward voltage

Maximum reverse current

1.25

@VR=20V

0.025

2.5

@VR=75V

μA

@VR=25V, TJ=150 ^OC

@VR=75V, TJ=150 ^OC

Maximum reverse recovery time

Typical diode capacitance

Maximum junction temperature

Storage temperature

Trr

°C

IF=10mA, VR=6V

VR=0V, f=1.0MHz

-65~+150

-65 to +150

TSTG

REV:C

Page 1

QW-B0004

Comchip Technology CO., LTD.

12 3 4

中文翻译

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