Datasheet > CDLL5712

CDLL5712

更新时间： 2024-11-14 22:56:47

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管
页数	文件大小	规格书
2页	38K
描述
SCHOTTKY BARRIER DIODES

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中文翻译

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数据手册

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CDLL5712 数据手册

1N5711UR-1

1N5712UR-1

1N6857UR-1

1N6858UR-1

CDLL2810

CDLL5711

CDLL5712

CDLL6263

CDLL6857

CDLL6858

• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS

PER MIL-PRF-19500/444

• 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS

PER MIL-PRF 19500/445

• SCHOTTKY BARRIER DIODES

• LEADLESS PACKAGE FOR SURFACE MOUNT

• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION

MAXIMUM RATINGS

Operating Temperature: -65°C to +150°C

Storage Temperature: -65°C to +150°C

Operating Current:

5711 & 6263 TYPES

2810, 5712 & 6858 Types :75mA dc @ T

6857 Types

:All Types: Derate to 0 (zero) mA dc @ +150°C

:33mA dc @ T

= +140°C

= +130°C

:150mA dc @ T

= +110°C

Derating:

MILLIMETERS

INCHES

ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.

DIM MIN MAX MIN MAX

1.60

0.41

3.30

1.70 0.063 0.067

0.55 0.016 0.022

3.70 .130 .146

CDI

TYPE

MINIMUM

BREAKDOWN

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

MAXIMUM

CAPACITANCE @

ESDS

2.54 REF.

0.03 MIN.

.100 REF.

.001 MIN.

NUMBER

= 0 VOLTS

f = 1.0 MH^Z

CLASS

V_BR@ 10

@ 1 mA

@ V

F @ F

FIGURE 1

VOLTS

0.41

VOLTS@mA

1.0 @ 15

1.0@35

200

150

VOLTS

PICO FARADS

1N5711UR-1

1N5712UR-1

1N6857UR-1

2.0

4.5

0.41

DESIGN DATA

0.35

0.75@ 35

1N6858UR-1

0.36

0.65 @ 15

200

4.5

CASE: DO-213AA, Hermetically sealed

CDLL2810

CDLL5711

CDLL5712

CDLL6263

CDLL6857

CDLL6858

0.41

0.35

0.36

1.0 @ 35

1.0 @ 15

1.0 @ 35

1.0 @ 15

0.75 @ 35

0.65 @ 15

100

200

150

200

150

200

2.0

2.2

4.5

glass case. (MELF, SOD-80, LL34)

LEAD FINISH: Tin / Lead

THERMAL RESISTANCE: (R

OJEC

100 °C/W maximum at L = 0 inch

THERMAL IMPEDANCE: (Z

): 40

OJX

°C/W maximum

NOTE:

Effective Minority Carrier Lifetime (τ ) is 100 Pico Seconds

POLARITY: Cathode end is banded.

MOUNTING SURFACE SELECTION:

The Axial Coefficient of Expansion

(COE) Of this Device is Approximately

+6PPM/°C. The COE of the Mounting

Surface System Should Be Selected To

Provide A Suitable Match With This

Device.

NOTICE: Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the

factory for qualification completion dates. These two part numbers are being introduced by CDI as

“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and

a higher ESDS class with the only trade-off being an increase in capacitance.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

WEBSITE: http://www.microsemi.com

FAX (978) 689-0803

145

中文翻译

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与CDLL5712相关器件

型号	品牌	获取价格	描述	数据表
CDLL5712E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 0.075A, 20V V(RRM), Silicon, DO-213AA, HERMETIC SEAL
CDLL5817	CDI-DIODE	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS
CDLL5817	MICROSEMI	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS
CDLL5817E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, Silicon, DO-213AB, HERMETIC SEALED, GLASS, LL41,
CDLL5818	CDI-DIODE	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS
CDLL5818	MICROSEMI	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS
CDLL5818E3	MICROSEMI	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, DO-213AB, HERMETIC SEALED,
CDLL5818E3/TR	MICROSEMI	获取价格	Rectifier Diode,
CDLL5819	CDI-DIODE	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS
CDLL5819	MICROSEMI	获取价格	1 AMP SCHOTTKY BARRIER RECTIFIERS

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