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CDBC5150HB-G PDF预览

CDBC5150HB-G

更新时间: 2024-11-21 20:44:59
品牌 Logo 应用领域
上华 - COMCHIP 光电二极管
页数 文件大小 规格书
4页 76K
描述
Rectifier Diode,

CDBC5150HB-G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-C2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-C2最大非重复峰值正向电流:125 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:150 V最大反向电流:3 µA
表面贴装:YES技术:SCHOTTKY
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDBC5150HB-G 数据手册

 浏览型号CDBC5150HB-G的Datasheet PDF文件第2页浏览型号CDBC5150HB-G的Datasheet PDF文件第3页浏览型号CDBC5150HB-G的Datasheet PDF文件第4页 
SMD Schottky Barrier Rectifiers  
CDBC530HB-G Thru. CDBC5200HB-G  
Reverse Voltage: 30 to 200 Volts  
Forward Current: 5.0 Amp  
RoHS Device  
Features  
DO-214AB (SMC)  
-Ideal for surface mount applications.  
-Easy pick and place.  
0.280(7.11)  
0.260(6.60)  
-Plastic package has Underwriters Lab.  
flammability classification 94V-0.  
0.245(6.22)  
0.220(5.59)  
0.126(3.17)  
0.114(2.92)  
-Built-in strain relief.  
-Low forward voltage drop.  
0.320(8.13)  
0.305(7.75)  
Mechanical data  
0.012(0.305)  
0.006(0.152)  
-Case: JEDEC DO-214AB, molded plastic.  
0.103(2.62)  
0.079(2.06)  
-Terminals: solderable per MIL-STD-750,  
method 2026.  
0.008(0.203)  
0.004(0.102)  
0.060(1.52)  
0.030(0.76)  
-Polarity: Color band denotes cathode end.  
-Approx. weight: 0.21 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
CDBC  
CDBC  
CDBC  
CDBC  
CDBC  
CDBC  
CDBC  
CDBC  
Units  
Parameter  
Symbol  
530HB-G 540HB-G 540AHB-G 550HB-G 560HB-G 5100HB-G 5150HB-G 5200HB-G  
Max. repetitive peak reverse voltage  
Max. DC blocking voltage  
Max. RMS voltage  
VRRM  
VDC  
30  
40  
40  
28  
45  
31.5  
45  
50  
50  
35  
60  
60  
42  
100  
100  
71  
150  
150  
105  
200  
200  
140  
V
V
V
30  
21  
VRMS  
Peak surge forward current, 8.3ms  
single half sine-wave superimposed  
on rate load (JEDEC method)  
IFSM  
125  
A
I(AC)  
VF  
5.0  
A
V
Max. Average Forward Current  
Max. Instantaneous Forward Voltage at  
5.0A  
0.67  
0.71  
0.78  
0.84  
0.86  
at TA=25 OC  
0.008  
8.0  
0.003  
4.0  
Max. Reverse Current  
IR  
mA  
Rated DC Blocking Voltage at TA=125 OC  
RθJA  
RθJL  
55  
17  
O
Typical Thermal Resistance (Note 1)  
C/W  
TJ  
-65 to +175  
-65 to +175  
OC  
OC  
Operation Junction Temperature  
Storage temperature  
TSTG  
Notes:  
1. Pulse test: 300μs pulse width, 1% duty cycle  
2. P.C.B. mounted with 0.55x0.55” (14x14mm) copper Pad Areas  
3. All dioce types meet requirements of JEDEC standard for influencestability ( ±15KV air discharge; ±8KV contact discharge)  
REV:A  
Page 1  
QW-BB025  
Comchip Technology CO., LTD.  

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