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CDB7620-000 PDF预览

CDB7620-000

更新时间： 2024-02-02 05:13:47
品牌 Logo 应用领域
阿尔法 - ALPHA 肖特基二极管
页数 文件大小 规格书
3页 299K
描述
Silicon Schottky Diode Chips

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中文翻译

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CDB7620-000 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DIE
包装说明：S-XUUC-N1针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.60风险等级：1.62
其他特性：LOW NOISE最小击穿电压：2 V
配置：SINGLE最大二极管电容：0.15 pF
二极管元件材料：SILICON二极管类型：MIXER DIODE
最大正向电压 (VF)：0.35 V频带：KU BAND
JESD-30 代码：S-XUUC-N1湿度敏感等级：1
元件数量：1端子数量：2
封装主体材料：UNSPECIFIED封装形状：SQUARE
封装形式：UNCASED CHIP峰值回流温度（摄氏度）：260
认证状态：Not Qualified表面贴装：YES
最小正切信号灵敏度：-40 dBm技术：SCHOTTKY
端子形式：NO LEAD端子位置：UPPER
处于峰值回流温度下的最长时间：40肖特基势垒类型：LOW BARRIER
Base Number Matches：1

CDB7620-000 数据手册

 浏览型号CDB7620-000的Datasheet PDF文件第2页浏览型号CDB7620-000的Datasheet PDF文件第3页 
Silicon Schottky Diode Chips  
Features  
I For Detector and Mixer Applications  
I Low Capacitance for Usage Beyond 40 GHz  
I ZBD and Low Barrier Designs  
I P-Type and N-Type Junctions  
I Large Bond Pad Chip Design  
Description  
Alpha’s product line of silicon Schottky diode chips are  
intended for use as detector and mixer devices in hybrid  
integrated circuits at frequencies from below 100 MHz to  
higher than 40 GHz. Alpha’s “Universal Chip” design  
features a 4 mil diameter bond pad that is offset from the  
semiconductor junction preventing damage to the active  
junction as a result of wire bonding.  
In a detector circuit operating at zero bias, depending on  
the video load impedance, a ZBD device with RV less than  
10 kΩ may be more sensitive than a low barrier diode with  
RV greater than 100 kΩ. Applying forward bias reduces  
the diode video resistance as shown in Figure 2. Lower  
video resistance also increases the video bandwidth but  
does not increase voltage sensitivity, as shown in  
Figure 3. Biased Schottky diodes have better temperature  
stability and also may be used in temperature  
compensated detector circuits.  
As power-sensing detectors, these Schottky diode chips  
all have the same voltage sensitivity so long as the output  
video impedance is much higher than the video  
resistance of the diode. Figure 1 shows the expected  
detected voltage sensitivity as a function of RF source  
impedance in an untuned circuit. Note that sensitivity is  
substantially increased by transforming the source  
impedance from 50 Ω to higher values. Maximum  
sensitivity occurs when the source impedance equals the  
video resistance.  
P-type Schottky diodes generate lower 1/F noise and are  
preferred for Doppler mixers and biased detector  
applications.The bond pad for the P-type Schottky diode  
is the cathode. N-type Schottky diodes have lower parasitic  
resistance, RS, and will perform with lower conversion loss  
in mixer circuits. The bond pad for the N-type Schottky  
diode is the anode.  
Electrical Specifications at 25°C  
1
2
3
CJ  
RT  
VF @ 1 mA  
(mV)  
VB  
RV @ Zero Bias  
Junction  
Type  
Outline  
Drawing  
Part Number  
Barrier  
(pF)  
Max.  
0.25  
0.15  
0.10  
0.15  
0.10  
0.30  
(Ω)  
Max.  
30  
(V)  
(kΩ)  
Min.–Max.  
135–240  
150–300  
275–375  
250–350  
270–350  
240–300  
Min.  
Typ.  
5.5  
CDC7630-000  
CDC7631-000  
CDB7619-000  
CDB7620-000  
CDF7621-000  
CDF7623-000  
ZBD  
ZBD  
Low  
Low  
Low  
Low  
P
P
P
P
N
N
1
2
2
2
2
2
526-006  
526-006  
526-006  
526-006  
526-011  
526-011  
80  
7.2  
40  
735  
537  
680  
245  
30  
20  
10  
1. CJ for low barrier diodes specified at 0 V. CJ for ZBDs specified at 0.15 V  
reverse bias.  
2. RT is the slope resistance at 10 mA. RS Max. may be calculated from:  
RS = RT - 2.6 x N.  
3. VB for low barrier diodes is specified at 10 µA. VB for ZBDs is specified  
at 100 µA.  
Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com  
1
Specifications subject to change without notice. 8/01A  
123

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