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CD0603-S01575R PDF预览

CD0603-S01575R

更新时间: 2024-11-27 03:25:03
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管开关
页数 文件大小 规格书
6页 220K
描述
Switching Chip Diode Series

CD0603-S01575R 数据手册

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Features  
Applications  
Cellular phones  
PDAs  
Desktop PCs and notebooks  
Digital cameras  
MP3 players  
Lead free as standard  
RoHS compliant*  
Leadless  
High speed  
Switching Chip Diode Series - 0603 / 1005  
General Information  
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly  
smaller electronic components.  
Bourns offers small-signal high-speed Switching Diodes for switching digital signal applications, in compact chip package 0603 and 1005 size  
format, which offer PCB real estate savings and are considerably smaller than competitive parts. The Switching Diodes offer a forward current  
of 100 mA or 150 mA, a reverse voltage of 80 V or 75 V and also have a low leakage reverse current option. The diodes are lead-free with  
Cu/Ni/Au plated terminations and are compatible with lead-free manufacturing processes, conforming to many industry and government  
regulations on lead-free components.  
Bourns® Chip Diodes conform to JEDEC standards, easy to handle on standard pick and place equipment and their flat configuration makes  
roll away much more difficult.  
Electrical Characteristics (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CDxxxx-S0180  
CDxxxx-S01575  
CDxxxx-S0180R  
Unit  
1.00  
1.00  
1.00  
Forward Voltage (Max.)  
V
F
V
(I = 100 mA)  
(I = 50 mA)  
(I = 100 mA)  
f
f
f
4
Capacitance Between Terminals (Max.)  
Reverse Recovery Time (Max.)  
Reverse Current (Max.)  
C
T
pF  
nS  
µA  
(f = 100 MHz, V = 1 V DC)  
r
4
t
rr  
(V = 6V, I = 10 mA, R = 50 )  
r
f
L
0.1  
2.5  
(V = 75 V)  
0.05  
I
R
(V = 80 V)  
(V = 75 V)  
r
r
r
Absolute Ratings (@ T = 25 °C Unless Otherwise Noted)  
A
Parameter  
Symbol  
CDxxxx-S0180  
CDxxxx-S01575  
CDxxxx-S0180R  
Unit  
V
Repetitive Peak Reverse Voltage  
Reverse Voltage  
V
90  
80  
100  
75  
90  
80  
RRM  
V
V
R
Average Forward Current  
Forward Current, Surge Peak  
I
100  
1*  
150  
4**  
100  
1*  
mA  
A
o
I
surge  
Power Dissipation - CD0603  
Power Dissipation - CD1005  
150  
300  
150  
300  
150  
300  
PD  
mW  
Storage Temperature  
Junction Temperature  
T
-40 to +125  
-40 to +125  
°C  
°C  
STG  
T
J
*
Condition: 8.3 ms single half sine-wave superimposed on rate load  
(JEDEC method).  
How To Order  
** Condition: 1.0 µs single half sine-wave superimposed on rate load  
(JEDEC method).  
CD 0603 - S 01 80 R  
Common Code  
Chip Diode  
Package  
• 0603  
• 1005  
Model  
S = High Speed Switching  
Average Forward Current (I ) Code  
o
01 = 100 mA  
015 = 150 mA  
(Code x 1000 mA = Average Forward Current)  
Reverse Voltage (V ) Code  
R
80 = 80 V  
75 = 75 V  
Reverse Current Suffix  
R = Low Leakage I (CDxxxx-S0180R)  
R
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  

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