5秒后页面跳转
CC327-40 PDF预览

CC327-40

更新时间: 2024-02-08 18:25:10
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 62K
描述
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 500MA I(C) | TO-92

CC327-40 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
最大集电极电流 (IC):0.8 A配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

CC327-40 数据手册

 浏览型号CC327-40的Datasheet PDF文件第2页浏览型号CC327-40的Datasheet PDF文件第3页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS  
CC327, CC327A, CC328 (PNP)  
CC337, CC337A, CC338 (NPN)  
TO-92  
BCE  
Complementary Transistors For Use in Driver And Output Stages of Audio Amplifiers  
ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C )  
DESCRIPTION  
SYMBOL  
CC327 CC327A  
CC337 CC337A  
CC328  
CC338  
25  
UNITS  
Collector -Emitter Voltage  
Collector -Emitter Voltage  
Emitter -Base Voltage  
Collector Current Continuous  
Peak  
Emitter Current Peak  
Base Current Continuous  
Base Current Peak  
Power Dissipation@ Ta=25 deg C  
Derate Above 25 deg C  
Operating & Storage Junction  
Temperature Range  
THERMAL RESISTANCE  
From Junction to Ambient in Free Air  
VCE0  
VCES  
VEBO  
IC  
ICM  
IEM  
IB  
45  
50  
60  
60  
V
V
V
mA  
A
A
mA  
mA  
30  
5.0  
500  
1.0  
1.0  
100  
200  
625  
5
IBM  
PTA  
mW  
mW/deg C  
deg C  
Tj, Tstg  
Rth(j-a)  
-65 to +150  
200  
deg C/W  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL  
TEST CONDITION  
CC327 CC327A  
CC337 CC337A  
CC328 UNITS  
CC338  
Collector -Emitter Voltage  
VCEO  
VCES  
VEBO  
ICBO  
IC=10mA,IB=0  
IC=100uA.IE=0  
IE=10uA, IC=0  
VCB=20V, IE=0  
VCB=20V, IE=0, Tj=150 deg C  
VEB=5V, IC=0  
>45  
>50  
>60  
>60  
>25  
>30  
V
V
V
nA  
uA  
uA  
>5.0  
<100  
<5.0  
<10  
Emitter-Base Voltage  
Collector-Cut off Current  
Emitter Cut off Current  
IEBO  
Continental Device India Limited  
Page 1 of 3  
Data Sheet  

与CC327-40相关器件

型号 品牌 获取价格 描述 数据表
CC327A CDIL

获取价格

PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CC327APNP CDIL

获取价格

PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CC327PNP CDIL

获取价格

PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CC328 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92
CC328-16 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92
CC328-25 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-92
CC328-40 CDIL

获取价格

Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, PNP, Silicon, TO-92, PLASTIC, TO-92
CC32C1 CALIBER

获取价格

HC-49/US SMD Microprocessor Crystals
CC32C3 CALIBER

获取价格

HC-49/US SMD Microprocessor Crystals
CC32C5 CALIBER

获取价格

HC-49/US SMD Microprocessor Crystals