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CBRDFSH3-40TR13 PDF预览

CBRDFSH3-40TR13

更新时间: 2024-09-24 21:08:43
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 890K
描述
Bridge Rectifier Diode,

CBRDFSH3-40TR13 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.73
Base Number Matches:1

CBRDFSH3-40TR13 数据手册

 浏览型号CBRDFSH3-40TR13的Datasheet PDF文件第2页 
Product Brief  
RoHS & REACH Compliant  
Schottky Bridge Rectifiers  
in low profile BR DFN package  
Top View  
Bottom View  
BR DFN  
1.0A, 40-100V 2.0A, 40-100V 3.0A, 40-60V*  
Central Semiconductor’s CBRDFSH Schottky Bridge Rectifier series was designed to meet designers’ requirements for  
smaller and lower profile devices necessary to reduce overall product size. This series provides a variety of current and  
voltage options. Each device is packaged in the low profile BR DFN surface mount case and features highly desirable energy  
efficiency. These full wave bridge rectifiers utilize individual glass passivated die to reduce leakage and improve performance  
and reliability. Ideal for any application requiring a space saving and energy efficient Schottky bridge rectifier, including Power  
over Ethernet (PoE) and intelligent lighting.  
Features  
Applications  
Benefits  
• Power over Ethernet (PoE)  
• networks  
• Energy efficiency  
• Low forward voltage (VF)  
as low as 500mV  
• Space savings  
• cameras  
• speakers  
• point of sale terminals  
• High current range (1.0A-3.0A)  
• Low profile package  
• RoHS and REACH compliant  
• Low profile BR DFN package  
(1.22mm)  
• Intelligent lighting  
Maximum Ratings (T =25˚C)  
Electrical Characteristics (T =25˚C unless otherwise noted)  
A
A
Central Part No.  
I
O
V
RRM  
T , T  
J stg  
V
@ I  
I
@ V  
R
F
F
R
(A)  
MAX  
(V)  
(˚C)  
MAX  
(mV)  
TYP  
(mV)  
MAX  
(A)  
(µA)  
TYP  
(µA)  
MAX  
(V)  
MAX  
40  
CBRDFSH1-40  
CBRDFSH1-60  
CBRDFSH1-100  
CBRDFSH2-40  
CBRDFSH2-60  
CBRDFSH2-100  
CBRDFSH3-40*  
CBRDFSH3-60*  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
3.0  
3.0  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
-55 to +125  
490  
600  
800  
490  
600  
800  
530  
670  
500  
700  
850  
520  
700  
850  
550  
700  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
3.0  
3.0  
10  
10  
200  
200  
200  
200  
200  
200  
200  
200  
40  
60  
60  
100  
40  
1.0  
25  
100  
40  
60  
10  
60  
100  
40  
0.5  
10  
100  
40  
60  
5.0  
60  
* Devices currently under development, preliminary data  
Package profile comparison:  
BR DFN has a 54% lower profile than HD DIP.  
2.7mm  
1.2mm  
HD DIP  
BR DFN  
SPICE Models and other technical resources:  
RoHS and REACH compliance declarations  
Visit www.centralsemi.com to download SPICE models for these devices.  
Visit the Quality section of Central’s website to access.  
Central Semiconductor Corp.  
145 Adams Avenue  
Hauppauge, NY 11788 USA www.centralsemi.com  

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Bridge Rectifier Diode,