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CBRHD-02BKLEADFREE PDF预览

CBRHD-02BKLEADFREE

更新时间: 2024-01-25 04:36:40
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 645K
描述
Bridge Rectifier Diode, 1 Phase, 0.5A, 200V V(RRM), Silicon,

CBRHD-02BKLEADFREE 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DIP-4Reach Compliance Code:not_compliant
风险等级:5.92其他特性:HIGH RELIABILITY
最小击穿电压:200 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PDSO-G4JESD-609代码:e0
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:200 V
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED

CBRHD-02BKLEADFREE 数据手册

 浏览型号CBRHD-02BKLEADFREE的Datasheet PDF文件第2页 
CBRHD SERIES  
SURFACE MOUNT  
HIGH DENSITY  
0.5 AMP  
SILICON BRIDGE RECTIFIER  
www.centralsemi.com  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CBRHD series  
types are silicon full wave bridge rectifiers mounted in  
a durable epoxy surface mount molded case, utilizing  
glass passivated chips.  
MARKING CODES:  
CBRHD-02: CBD2  
CBRHD-06: CBD6  
CBRHD-04: CBD4  
CBRHD-10: CBD10  
HD DIP CASE  
This series is UL listed: file number E130224  
FEATURES:  
50% higher density (Amps/mm2) than the industry  
standard 1.0 Amp surface mount bridge rectifier.  
Glass passivated chips for high reliability.  
Efficient use of board space: requires only 42mm2 of  
board space vs. 120mm2 of board space needed for  
industry standard 1.0 Amp surface mount bridge rectifier.  
CBRHD CBRHD CBRHD CBRHD  
MAXIMUM RATINGS: (T =25°C unless otherwise noted) SYMBOL -02  
-04  
400  
400  
280  
-06  
600  
600  
420  
-10 * UNITS  
A
Peak Repetitive Reverse Voltage  
V
200  
200  
140  
1000  
1000  
700  
V
V
RRM  
DC Blocking Voltage  
V
R
RMS Reverse Voltage  
V
V
R(RMS)  
Average Forward Current (T =40°C) (Note 1)  
I
0.5  
0.8  
30  
A
A
O
O
Average Forward Current (T =40°C) (Note 2)  
I
A
A
Peak Forward Surge Current  
I
A
FSM  
T , T  
Operating & Storage Junction Temperature  
-65 to +150  
°C  
J
stg  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
TYP  
MAX  
5.0  
UNITS  
µA  
I
I
V =Rated V  
R
R
RRM  
RRM  
V =Rated V  
, T =125°C  
500  
1.0  
µA  
R
R
A
V
I =400mA  
V
F
F
C
V =4.0V, f=1.0MHz  
20  
pF  
J
R
Notes: (1) Mounted on Glass-Epoxy PCB.  
(2) Mounted on Ceramic PCB.  
* Available on special order, please consult factory.  
R3 (4-January 2010)  

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