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CBAT54SWPBFREE PDF预览

CBAT54SWPBFREE

更新时间: 2024-11-24 13:02:55
品牌 Logo 应用领域
CENTRAL 肖特基二极管
页数 文件大小 规格书
2页 114K
描述
Rectifier Diode,

CBAT54SWPBFREE 技术参数

是否Rohs认证:符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6Is Samacsys:N
JESD-609代码:e3峰值回流温度(摄氏度):NOT SPECIFIED
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CBAT54SWPBFREE 数据手册

 浏览型号CBAT54SWPBFREE的Datasheet PDF文件第2页 
TM  
CBAT54  
Central  
CBAT54A  
CBAT54C  
CBAT54S  
Semiconductor Corp.  
DESCRIPTION:  
SURFACE MOUNT  
SILICON SCHOTTKY DIODES  
The CENTRAL SEMICONDUCTOR CBAT54  
Series types are Silicon Schottky Diodes in an  
SOT-23 Surface Mount Package.  
SOT-23 CASE  
CBAT54:  
SINGLE  
MARKING CODE: CL4  
MARKING CODE: CL42  
MARKING CODE: CL43  
MARKING CODE: CL44  
CBAT54A:  
CBAT54C:  
CBAT54S:  
DUAL, COMMON ANODE  
DUAL, COMMON CATHODE  
DUAL, IN SERIES  
MAXIMUM RATINGS: (T =25°C)  
A
SYMBOL  
UNITS  
Continuous Reverse Voltage  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current, tp=10ms  
Power Dissipation  
V
30  
V
R
F
I
200  
300  
600  
350  
mA  
mA  
mA  
mW  
I
I
FRM  
FSM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T , T  
stg  
-65 to +150  
357  
°C  
°C/W  
J
Θ
JA  
ELECTRICAL CHARACTERISTICS PER DIODE: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MAX  
UNITS  
I
V =25V  
2.0  
240  
320  
400  
500  
800  
10  
µA  
mV  
mV  
mV  
mV  
mV  
pF  
R
R
V
V
V
V
V
I =0.1mA  
F
F
F
F
F
F
I =1.0mA  
F
I =10mA  
F
I =30mA  
F
I =100mA  
F
C
V =1.0V, f=1.0 MHz  
d
R
t
I =I =10mA, I =1.0mA, R =100Ω  
rr  
5.0  
ns  
rr  
F
R
L
R0 (13-January 2005)  

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