CAT5111
OPERATION MODES
R
H
Operation
¯¯¯
INC
¯¯
CS
¯
U/D
C
C
H
High to Low
High to Low
High
Low
Low
High
Low
X
Wiper toward RH
Wiper toward RL
R
WI
R
WB
Low to High
Low to High
High
Store Wiper Position
No Store, Return to Standby
Standby
C
W
Low
X
X
X
L
Potentiometer
Equivalent Circuit
R
L
ABSOLUTE MAXIMUM RATINGS(1)
Parameters
Supply Voltage
VCC to GND
Inputs
Ratings
Units
Parameters
Ratings
Units
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
Industrial (‘I’ suffix)
-0.5 to +7V
V
0 to 70
ºC
ºC
ºC
ºC
ºC
-40 to +85
+150
¯¯
-0.5 to VCC +0.5
-0.5 to VCC +0.5
-0.5 to VCC +0.5
-0.5 to VCC +0.5
-0.5 to VCC +0.5
-0.5 to VCC +0.5
V
V
V
V
V
V
Junction Temperature
CS to GND
¯¯¯
INC to GND
Storage Temperature
-65 to 150
+300
¯
Lead Soldering (10s max)
U/D to GND
RH to GND
RL to GND
RWB to GND
RELIABILITY CHARACTERISTICS
Symbol Parameter
Test Method
Min
2000
Typ
Max
Units
V
(2)
VZAP
ESD Susceptibility MIL-STD-883, Test Method 3015
(2) (3)
ILTH
TDR
NEND
Latch-Up
JEDEC Standard 17
100
mA
Data Retention
Endurance
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 1003
100
Years
Stores
1,000,000
DC ELECTRICAL CHARACTERISTICS
CC = +2.5V to +6V unless otherwise specified
V
Power Supply
Symbol Parameter
Conditions
Min
2.5
–
Typ
–
Max
6
Units
V
VCC
Operating Voltage Range
VCC = 6V, f = 1MHz, IW = 0
VCC = 6V, f = 250kHz, IW = 0
Programming, VCC = 6V
VCC = 3V
–
200
100
1000
500
µA
µA
µA
µA
ICC1
Supply Current (Increment)
–
–
–
–
ICC2
Supply Current (Write)
–
–
¯¯
CS = VCC - 0.3V
(3)
ISB1
Supply Current (Standby)
–
75
150
µA
¯ ¯¯¯
U/D, INC = VCC - 0.3V or GND
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) This parameter is tested initially and after a design or process change that affects the parameter.
(3) Latch-up protection is provided for stresses up to 100mA on address and data pins from -1V to VCC + 1V
(4) IW = source or sink
(5) These parameters are periodically sampled and are not 100% tested.
© 2007 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. MD-2008 Rev. P