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CAT28C65BGI-90T PDF预览

CAT28C65BGI-90T

更新时间: 2024-02-01 10:37:42
品牌 Logo 应用领域
安森美 - ONSEMI 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
13页 84K
描述
64K-Bit CMOS PARALLEL EEPROM

CAT28C65BGI-90T 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFJ包装说明:QCCJ, LDCC32,.5X.6
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.06最长访问时间:90 ns
命令用户界面:NO数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e3长度:13.965 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:32
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:8KX8
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER页面大小:32 words
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:5 V编程电压:5 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:3.55 mm最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.03 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40切换位:YES
宽度:11.425 mm最长写入周期时间 (tWC):5 ms
Base Number Matches:1

CAT28C65BGI-90T 数据手册

 浏览型号CAT28C65BGI-90T的Datasheet PDF文件第2页浏览型号CAT28C65BGI-90T的Datasheet PDF文件第3页浏览型号CAT28C65BGI-90T的Datasheet PDF文件第4页浏览型号CAT28C65BGI-90T的Datasheet PDF文件第6页浏览型号CAT28C65BGI-90T的Datasheet PDF文件第7页浏览型号CAT28C65BGI-90T的Datasheet PDF文件第8页 
CAT28C65B  
A.C. CHARACTERISTICS, Read Cycle  
VCC = 5V ±10%, unless otherwise specified.  
28C65B-90  
28C65B-12  
28C65B-15  
Symbol  
tRC  
Parameter  
Read Cycle Time  
Min. Max. Min. Max. Min. Max. Units  
90  
120  
150  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCE  
CE Access Time  
90  
90  
50  
120  
120  
60  
150  
150  
70  
tAA  
Address Access Time  
OE Access Time  
tOE  
(1)  
tLZ  
CE Low to Active Output  
OE Low to Active Output  
CE High to High-Z Output  
OE High to High-Z Output  
Output Hold from Address Change  
0
0
0
0
0
0
(1)  
tOLZ  
(1)(2)  
tHZ  
50  
50  
50  
50  
50  
50  
(1)(2)  
tOHZ  
(1)  
tOH  
0
0
0
Figure 1. A.C. Testing Input/Output Waveform(3)  
2.4 V  
2.0 V  
0.8 V  
INPUT PULSE LEVELS  
0.45 V  
REFERENCE POINTS  
Figure 2. A.C. Testing Load Circuit (example)  
1.3V  
1N914  
3.3K  
DEVICE  
UNDER  
TEST  
OUT  
C
= 100 pF  
L
C
INCLUDES JIG CAPACITANCE  
L
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.  
(3) Input rise and fall times (10% and 90%) < 10 ns.  
© 2009 SCILLC. All rights reserved.  
Characteristics subject to change without notice  
Doc. No. MD-1009, Rev. H  
5

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