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CAT24C041J-42 PDF预览

CAT24C041J-42

更新时间： 2024-01-15 09:31:42
品牌 Logo 应用领域
CATALYST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
12页 73K
描述
EEPROM, 512X8, Serial, CMOS, PDSO8

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CAT24C041J-42 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SOP, SOP8,.25Reach Compliance Code：unknown
风险等级：5.92数据保留时间-最小值：100
耐久性：1000000 Write/Erase CyclesI2C控制字节：1010XXMR
JESD-30 代码：R-PDSO-G8JESD-609代码：e0
内存密度：4096 bit内存集成电路类型：EEPROM
内存宽度：8端子数量：8
字数：512 words字数代码：512
最高工作温度：70 °C最低工作温度：
组织：512X8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL电源：5 V
认证状态：Not Qualified串行总线类型：I2C
最大待机电流：0.00005 A子类别：EEPROMs
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
写保护：HARDWAREBase Number Matches：1

CAT24C041J-42 数据手册

 浏览型号CAT24C041J-42的Datasheet PDF文件第1页浏览型号CAT24C041J-42的Datasheet PDF文件第3页浏览型号CAT24C041J-42的Datasheet PDF文件第4页浏览型号CAT24C041J-42的Datasheet PDF文件第5页浏览型号CAT24C041J-42的Datasheet PDF文件第6页浏览型号CAT24C041J-42的Datasheet PDF文件第7页 
CAT24CXX1/XX2  
Advanced Information  
ABSOLUTE MAXIMUM RATINGS*  
COMMENT  
Temperature Under Bias....................–55°C to +125°C  
Storage Temperature........................ –65°C to +150°C  
Stresses above those listed under “Absolute Maximum  
Ratings” may cause permanent damage to the device.  
These are stress ratings only, and functional operation  
of the device at these or any other conditions outside of  
those listed in the operational sections of this specifica-  
tion is not implied. Exposure to any absolute maximum  
rating for extended periods may affect device perfor-  
mance and reliability.  
Voltage on Any Pin with  
(1)  
Respect to Ground  
..............–2.0V to +V  
+ 2.0V  
CC  
VCC with Respect to Ground..................–2.0V to +7.0V  
Package Power Dissipation  
Capability (Ta = 25°C)1.0W.................................1.0W  
Lead Soldering Temperature (10 secs)...............300°C  
Output Short Circuit Current(2) ..........................100mA  
RELIABILITY CHARACTERISTICS  
Symbol  
Parameter  
Min.  
Max. Units  
Reference Test Method  
(3)  
NEND  
Endurance  
1,000,000  
100  
Cycles/Byte  
Years  
MIL-STD-883, Test Method 1033  
MIL-STD-883, Test Method 1008  
MIL-STD-883, Test Method 3015  
JEDEC Standard 17  
(3)  
TDR  
Data Retention  
ESD Susceptibility  
Latch-up  
(3)  
VZAP  
2000  
Volts  
(3)(4)  
ILTH  
100  
mA  
D.C. OPERATING CHARACTERISTICS  
V
CC  
= +2.7V to +6.0V, unless otherwise specified.  
Limits  
Symbol  
ICC  
Parameter  
Min.  
Typ. Max.  
Units  
mA  
Test Conditions  
fSCL = 100 KHz  
Vcc=3.3V  
Power Supply Current  
Standby Current  
3
Isb  
40  
µA  
50  
2
µA  
µA  
µA  
V
Vcc=5  
ILI  
Input Leakage Current  
Output Leakage Current  
Input Low Voltage  
VIN=GND or VCC  
VIN=GND or VCC  
ILO  
10  
VIL  
–1  
VCC x 0.3  
VIH  
VOL  
Input High Voltage  
VCC x 0.7  
VCC + 0.5  
0.4  
V
Output Low Voltage (SDA)  
V
IOL = 3 mA ,VCC=3.0V  
CAPACITANCE T = 25°C, f = 1.0 MHz, V  
= 5V  
A
CC  
Symbol  
Test  
Max.  
Units  
Conditions  
VI/O = 0V  
VIN = 0V  
(3)  
CI/O  
Input/Output Capacitance (SDA)  
Input Capacitance (SCL)  
8
6
pF  
pF  
(3)  
CIN  
Note:  
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC  
voltage on output pins is V +0.5V, which may overshoot to V + 2.0V for periods of less than 20ns.  
CC  
CC  
(2) Output shorted for no more than one second. No more than one output shorted at a time.  
(3) This parameter is tested initially and after a design or process change that affects the parameter.  
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to V +1V.  
CC  
Doc. No. 25079-00 8/99 M-1  
2
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