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CAT24C03WI-3

更新时间: 2024-02-10 05:46:55
品牌 Logo 应用领域
CATALYST 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
20页 402K
描述
2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection

CAT24C03WI-3 数据手册

 浏览型号CAT24C03WI-3的Datasheet PDF文件第2页浏览型号CAT24C03WI-3的Datasheet PDF文件第3页浏览型号CAT24C03WI-3的Datasheet PDF文件第4页浏览型号CAT24C03WI-3的Datasheet PDF文件第5页浏览型号CAT24C03WI-3的Datasheet PDF文件第6页浏览型号CAT24C03WI-3的Datasheet PDF文件第7页 
CAT24C03  
2-Kb I2C CMOS Serial EEPROM with Partial Array Write Protection  
FEATURES  
DEVICE DESCRIPTION  
Supports Standard and Fast I2C Protocol  
1.8 V to 5.5 V Supply Voltage Range  
16-Byte Page Write Buffer  
The CAT24C03 is a 2-Kb Serial CMOS EEPROM,  
internally organized as 16 pages of 16 bytes each, for  
a total of 256 bytes of 8 bits each.  
It features a 16-byte page write buffer and supports  
both the Standard (100 kHz) as well as Fast (400 kHz)  
I2C protocol.  
Hardware Write Protection for upper half of  
memory  
Schmitt Triggers and Noise Suppression Filters  
on I2C Bus Inputs (SCL and SDA).  
Write operations can be inhibited by taking the WP pin  
High (this protects the upper half of the memory).  
Low power CMOS technology  
1,000,000 program/erase cycles  
100 year data retention  
The CAT24C03 is available in RoHS compliant “Green”  
and “Gold” 8-lead PDIP, SOIC, TSSOP and TDFN  
packages.  
RoHS compliant “  
& “  
8-pin PDIP, SOIC, TSSOP and TDFN packages  
Industrial temperature range  
PIN CONFIGURATION  
FUNCTIONAL SYMBOL  
PDIP (L)  
SOIC (W)  
TSSOP (Y)  
TDFN (VP2)  
V
CC  
A
1
8
V
CC  
0
SCL  
A
2
3
4
7
6
5
WP  
1
2
A
SCL  
SDA  
A , A , A  
CAT24C03  
SDA  
2
1
0
V
SS  
For the location of Pin 1, please consult the  
corresponding package drawing.  
WP  
V
SS  
PIN FUNCTIONS  
A0, A1, A2  
SDA  
SCL  
Device Address  
Serial Data  
Serial Clock  
Write Protect  
Power Supply  
Ground  
WP  
VCC  
VSS  
* Catalyst carries the I2C protocol under a license from the Philips Corporation.  
© 2006 by Catalyst Semiconductor, Inc.  
Characteristics subject to change without notice  
Doc. No. 1113, Rev. A  
1

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