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C460XT290-S2100-C PDF预览

C460XT290-S2100-C

更新时间: 2024-11-21 19:43:27
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 260K
描述
Visible LED

C460XT290-S2100-C 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84颜色@波长:Blue
最大正向电流:0.03 A最大正向电压:3.7 V
最高工作温度:100 °C最低工作温度:-40 °C
最大反向电压:5 V子类别:Visible LEDs
Base Number Matches:1

C460XT290-S2100-C 数据手册

 浏览型号C460XT290-S2100-C的Datasheet PDF文件第2页浏览型号C460XT290-S2100-C的Datasheet PDF文件第3页浏览型号C460XT290-S2100-C的Datasheet PDF文件第4页浏览型号C460XT290-S2100-C的Datasheet PDF文件第5页浏览型号C460XT290-S2100-C的Datasheet PDF文件第6页 
®
XThin LEDs  
CxxxXT290-Sxx00-x  
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials  
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED  
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a  
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and  
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications  
and the ability to withstand 1000V ESD. Applications for XThin include next-generation mobile appliances for use  
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption  
are required.  
FEATURES  
APPLICATIONS  
XThin LED Performance  
SMT Packages  
Cellular Phone LCD Backlighting  
Digital Camera Flash  
Blue  
XT-12™ – 12.0 mW min.  
XT-16™ – 16.0 mW min.  
XT-18™ – 18.0 mW min.  
XT-21™ – 21.0 mW min.  
XT-24™ – 24.0 mW min.  
Mobile Appliance Key Pads  
White LEDs  
Blue LEDs  
LED Video Displays  
Green – 7.0 mW min.  
Low Forward Voltage – 3.2 V Typical at 20 mA  
Class 2 ESD Rating  
Sn Contact for Low-Temp. Die Attach Methods  
Die Attach Options  
Flux Eutectic; Flux & Temperature (-C)  
Eutectic; Temperature & Pressure (-D)  
CxxxXT290-Sxx00-x Chip Diagram  
Top View  
Bottom View  
Die Cross Section  
G•SiC LED Chip  
300 x 300 μm  
Backside  
Contact  
Metal  
Gold Bond Pad  
105 μm Diameter  
Cathode (-)  
Bottom View for -C  
Bottom View for -D  
SiC Substrate  
t = 115 µm  
Anode (+)  
Subject to change without notice.  
www.cree.com  

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