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C44C8 PDF预览

C44C8

更新时间: 2024-11-16 04:10:47
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CDIL 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
3页 101K
描述
NPN SILICON EPITAXIAL POWER TRANSISTORS

C44C8 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.46Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):30 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

C44C8 数据手册

 浏览型号C44C8的Datasheet PDF文件第2页浏览型号C44C8的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
NPN SILICON EPITAXIAL POWER TRANSISTORS  
C44C8, C44C11  
TO - 220  
Plastic Package  
Medium Power Switching and Amplifier Applications  
Complementary C45C Series  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
C44C8  
70  
60  
C44C11  
90  
UNIT  
V
V
V
A
Collector- Emitter Voltage  
Collector- Emitter Voltage  
Emitter- Base Voltage  
Collector Current Continuous  
Peak *  
80  
5
4
6
ICM  
IB  
PD  
2
1.67  
30  
A
W
Base Current Continuous  
Power Dissipation TA=25ºC  
TC=25ºC  
Tj, Tstg  
-55 to +150  
ºC  
Operating & Storage Junction  
Temperature Range  
Thermal Resistance  
Junction to Ambient  
Junction to Case  
75  
4.2  
Rth (j-a)  
Rth (j-c)  
ºC/W  
ºC/W  
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
VCEO(sus)* IC=100mA, IB=0  
C44C8  
Collector- Emitter Sustaing Voltage  
60  
80  
-
-
100  
20  
-
V
V
mA  
mA  
-
-
-
-
-
-
-
-
-
-
C44C11  
ICES  
VCE=Rated VCES  
10  
100  
220  
-
0.5  
1.3  
Collector Cut off Current  
Emitter Cut off Current  
DC Current Gain  
IEBO VEB=5V, IC=0  
hFE*  
IC=0.2A, VCE=1V  
IC=2A, VCE=1V  
VCE(sat) * IC=1A, IB=50mA  
VBE(sat) * IC=1A, IB=100mA  
V
V
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
-
Dynamic Characteristics  
Collector Capacitance  
Ccbo  
fT  
VCB=10V, IE=0  
f=1MHz  
VCE=4V, IC=20mA  
-
-
100  
-
pF  
-
50  
MHz  
Current Gain Bandwidth Product  
Switching Characteristics  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
td + tr  
IC=1A, IB1=1B2=0.1A  
-
-
100  
500  
75  
-
-
-
ns  
ns  
ns  
Delay Time + Rise Time  
Storage Time  
Fall Time  
ts  
tf  
VCC=30V, tp=25ms  
* Pulse Test Pulse Width =300ms, Duty Cycle<2%  
Page 1 of 3  
Data Sheet  
Continental Device India Limited  

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