Datasheet > C356C273FDG5TA

C356C273FDG5TA

更新时间： 2024-11-15 08:31:19

品牌	Logo	应用领域
基美 - KEMET		电容器
页数	文件大小	规格书
11页	229K
描述
CAPACITOR, CERAMIC, MULTILAYER, 1000V, C0G, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

C356C273FDG5TA 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	RADIAL LEADED
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8532.24.00.60	风险等级：	5.76
电容：	0.027 µF	电容器类型：	CERAMIC CAPACITOR
介电材料：	CERAMIC	高度：	17.02 mm
JESD-609代码：	e3	长度：	12.7 mm
安装特点：	THROUGH HOLE MOUNT	多层：	Yes
负容差：	1%	端子数量：	2
最高工作温度：	125 °C	最低工作温度：	-55 °C
封装形状：	RECTANGULAR PACKAGE	封装形式：	Radial
包装方法：	Bulk	正容差：	1%
额定（直流）电压（URdc）：	1000 V	系列：	C35(C0G,1KV,F TOL)
尺寸代码：	5027	表面贴装：	NO
温度特性代码：	C0G	温度系数：	-/+30ppm/Cel ppm/ °C
端子面层：	Matte Tin (Sn) - with Nickel (Ni) barrier	端子节距：	10.16 mm
端子形状：	WIRE	宽度：	6.86 mm

C356C273FDG5TA 数据手册

MULTILAYER CERAMIC CAPACITORS/AXIAL & RADIAL LEADED

Multilayer ceramic capacitors are available in a

variety of physical sizes and configurations, including

leaded devices and surface mounted chips. Leaded

styles include molded and conformally coated parts

with axial and radial leads. However, the basic

capacitor element is similar for all styles. It is called a

chip and consists of formulated dielectric materials

which have been cast into thin layers, interspersed

with metal electrodes alternately exposed on opposite

edges of the laminated structure. The entire structure is

fired at high temperature to produce a monolithic

block which provides high capacitance values in a

small physical volume. After firing, conductive

terminations are applied to opposite ends of the chip to

make contact with the exposed electrodes.

Termination materials and methods vary depending on

the intended use.

TEMPERATURE CHARACTERISTICS

Ceramic dielectric materials can be formulated with

a wide range of characteristics. The EIA standard for

ceramic dielectric capacitors (RS-198) divides ceramic

dielectrics into the following classes:

Class III: General purpose capacitors, suitable

for by-pass coupling or other applications in which

dielectric losses, high insulation resistance and

stability of capacitance characteristics are of little or

no importance. Class III capacitors are similar to Class

II capacitors except for temperature characteristics,

Class I: Temperature compensating capacitors,

suitable for resonant circuit application or other appli-

cations where high Q and stability of capacitance char-

acteristics are required. Class I capacitors have

predictable temperature coefficients and are not

effected by voltage, frequency or time. They are made

from materials which are not ferro-electric, yielding

superior stability but low volumetric efficiency. Class I

capacitors are the most stable type available, but have

the lowest volumetric efficiency.

which are greater than

15%. Class III capacitors

have the highest volumetric efficiency and poorest

stability of any type.

KEMET leaded ceramic capacitors are offered in

the three most popular temperature characteristics:

C0G: Class I, with a temperature coefficient of 0

30 ppm per degree C over an operating

temperature range of - 55°C to + 125°C (Also

known as “NP0”).

X7R: Class II, with a maximum capacitance

change of 15% over an operating temperature

range of - 55°C to + 125°C.

Z5U: Class III, with a maximum capacitance

change of + 22% - 56% over an operating tem-

perature range of + 10°C to + 85°C.

Class II: Stable capacitors, suitable for bypass

or coupling applications or frequency discriminating

circuits where Q and stability of capacitance char-

acteristics are not of major importance. Class II

capacitors have temperature characteristics of 15%

or less. They are made from materials which are

ferro-electric, yielding higher volumetric efficiency but

less stability. Class II capacitors are affected by

temperature, voltage, frequency and time.

Specified electrical limits for these three temperature

characteristics are shown in Table 1.

SPECIFIED ELECTRICAL LIMITS

TEMPERATURE CHARACTERISTICS

PARAMETER

C0G

X7R

Z5U

Dissipation Factor: Measured at following conditions:

C0G — 1 kHz and 1 vrms if capacitance > 1000 pF

1 MHz and 1 vrms if capacitance ≤ 1000 pF

X7R — 1 kHz and 1 vrms* or if extended cap range 0.5 vrms

Z5U — 1 kHz and 0.5 vrms

0.15%

2.5%

4.0%

Dielectric Strength: 2.5 times rated DC voltage.

Pass Subsequent IR Test

Insulation Resistance (IR): At rated DC voltage,

whichever of the two is smaller

1,000 MΩ-µF

or 100 GΩ

1,000 MΩ-µF

or 100 GΩ

1,000 MΩ-µF

or 10 GΩ

Temperature Characteristics: Range, °C

Capacitance Change without

DC voltage

-55 to +125

30 ppm/°C

-55 to +125

15%

+10 to +85

+22%, -56%

* 1 MHz and 1 vrms if capacitance ≤ 100 pF on military product.

Table I

12 3 4 5 6 7...11

中文翻译

下载PDF

与C356C273FDG5TA相关器件

型号	品牌	获取价格	描述	数据表
C356C273G2G5CA	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 200V, C0G, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED
C356C273G5G5CA	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 50V, C0G, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED
C356C273GDG5CA	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 1000V, C0G, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED
C356C273J2G5CA	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 200V, C0G, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED
C356C273JDG5HA	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 1000V, C0G, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED
C356C273PCR5HA	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 500V, 100% +Tol, 0% -Tol, X7R, 15% TC, 0.027uF, Th
C356C273PDR5HA	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 1000V, 100% +Tol, 0% -Tol, X7R, 15% TC, 0.027uF, T
C356C273PDR5TA	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 1000V, 100% +Tol, 0% -Tol, X7R, 15% TC, 0.027uF, T
C356C273PGR5TA	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 2000V, 100% +Tol, 0% -Tol, X7R, 15% TC, 0.027uF, T
C356C273PHR5CA	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 3000V, X7R, 0.027uF, THROUGH HOLE MOUNT, RADIAL LEADED

与C356C273FDG5TA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

6
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

3
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

C356C273FDG5TA

C356C273FDG5TA 技术参数

C356C273FDG5TA 数据手册

与C356C273FDG5TA相关器件

与C356C273FDG5TA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

C356C273FDG5TA

C356C273FDG5TA 技术参数

C356C273FDG5TA 数据手册

与C356C273FDG5TA相关器件

与C356C273FDG5TA相关文章

您还可以找

您在本页遇到什么问题？