Datasheet > C1004

C1004

更新时间： 2024-11-23 22:28:07

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Process C1004

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数据手册

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C1004 数据手册

ISO 9001 Registered

Process C1004

CMOS 1.0µm

5 Volt Digital

Electrical Characteristics

T=25^oC Unless otherwise noted

N-Channel Transistor

Threshold Voltage

Body Factor

Conduction Factor

Effective Channel Length

Width Encroachment

Punch Through Voltage

Poly Field Threshold

Symbol

VT_N

γ_N

Minimum

Typical

0.75

0.60

0.75

0.8

Maximum

Unit

Comments

100x1.0µm

0.55

0.95

V^1/2

β_N

Leff_N

∆W_N

0.60

100

0.90

µA/V²100x100µm

µm

100x1.0µm

Per side

BVDSS_N

VTF_P(N

)

P-Channel Transistor

Threshold Voltage

Body Factor

Symbol

VT_P

γ_P

Minimum

–0.85

Typical

–1.0

0.4

Maximum

Unit

Comments

100x1.0µm

–1.15

V^1/2

Conduction Factor

β_P

µA/V²100x100µm

Effective Channel Length

Width Encroachment

Punch Through Voltage

Poly Field Threshold Voltage

Leff_P

∆W_P

BVDSS_P

VTF_P(P)

0.83

0.98

0.85

1.13

µm

100x1.0µm

Per side

–7

–10

Diffusion & Thin Films

Well (field) Sheet Resistance

N+ Sheet Resistance

N+ Junction Depth

P+ Sheet Resistance

P+ Junction Depth

Gate Oxide Thickness

Field Oxide Thickness

Poly Sheet Resistance

Metal-1 Sheet Resistance

Metal-2 Sheet Resistance

Passivation Thickness

Symbol

Minimum

0.8

Typical

1.0

0.45

0.5

700

Maximum

1.22

Unit

KΩ/o n-well

Ω/o

µm

Ω/o

µm

Ω/o

Comments

ρ_N-well(f)

ρ_N+

x_jN+

ρ_P+

100

x_jP+

T_GOX

T_FIELD

ρ_POLY

ρ_M1

ρ_M2

mΩ/o

200+900

T_PASS

oxide+nit.

Capacitance

Gate Oxide

Metal-1 to Poly1

Metal-1 to SIlicon

Metal-2 to Metal-1

Symbol

C_ox

C_M1P

C_MIS

Minimum

Typical

1.64

0.046

0.028

0.038

Maximum

Unit

Comments

1.52

1.82

fF/µm²

C_MM

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