Datasheet > C0603C479J5GAC

C0603C479J5GAC

更新时间： 2024-11-24 01:11:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
16页	497K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

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C0603C479J5GAC 数据手册

Document Number: MMG3014NT1

Rev. 5, 3/2016

Freescale Semiconductor

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3014NT1

Broadband High Linearity Amplifier

The MMG3014NT1 is a general purpose amplifier that is input and output

internally prematched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable for

applications with frequencies from 40 to 4000 MHz such as cellular, PCS,

BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

40--4000 MHz, 19.5 dB

25 dBm

InGaP HBT GPA

Features



Frequency: 40--4000 MHz

P1dB: 25 dBm @ 900 MHz

Small--Signal Gain: 19.5 dB @ 900 MHz

Third Order Output Intercept Point: 40.5 dBm @ 900 MHz

Single 5 V Supply

Active Bias

Cost--effective SOT--89 Surface Mount Plastic Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900 2140 3500

Symbol MHz MHz MHz Unit

Characteristic

300

Small--Signal Gain

(S21)

19.5

-- 2 5

-- 11

-- 1 2

-- 1 3

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

-- 8

Storage Temperature Range

Junction Temperature

stg

--65 to +150

175

C

Output Return Loss

(S22)

-- 1 9

Power Output @1dB

Compression

25.8

dBm

Third Order Output

Intercept Point

40.5 40.5

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit

tuned for specified frequency.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



27.4

Case Temperature 81C, 5 Vdc, 135 mA, no RF applied

2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

MMG3014NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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与C0603C479J5GAC相关器件

型号	品牌	获取价格	描述	数据表
C0603C479K1GAC7040	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.
C0603C479K1GAC9028	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.
C0603C479K1GAL7411	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 100V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.
C0603C479K3GAC7867	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 25V, C0G, -/+30ppm/Cel TC, 0.0000047uF, 0603
C0603C479K3GAC9028	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 25V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0
C0603C479K3GAL7013	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 25V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0
C0603C479K4GAC3325	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 16V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0
C0603C479K4GAC9028	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 16V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0
C0603C479K4GACTM	KEMET	获取价格	CAPACITOR, CERAMIC, MULTILAYER, 16V, C0G, 0.0000047uF, SURFACE MOUNT, 0603, CHIP, ROHS COM
C0603C479K5GAC7013	KEMET	获取价格	Ceramic Capacitor, Multilayer, Ceramic, 50V, 10% +Tol, 10% -Tol, C0G, -/+30ppm/Cel TC, 0.0

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