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BZX85C6V8 PDF预览

BZX85C6V8

更新时间: 2024-11-30 11:11:03
品牌 Logo 应用领域
安森美 - ONSEMI 高压测试二极管齐纳二极管
页数 文件大小 规格书
4页 134K
描述
齐纳二极管

BZX85C6V8 数据手册

 浏览型号BZX85C6V8的Datasheet PDF文件第2页浏览型号BZX85C6V8的Datasheet PDF文件第3页浏览型号BZX85C6V8的Datasheet PDF文件第4页 
Zener Diodes  
BZX85C10 - BZX85C16  
ABSOLUTE MAXIMUM RATINGS  
Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Power Dissipation @ T = 25°C  
Value  
1.0  
Unit  
www.onsemi.com  
P
D
W
A
Power Dissipation @ T = 25°C at 4 mm  
1.3  
L
distance from the glass package  
Derate above 50°C  
6.67  
mW/°C  
°C  
T , T  
Operating Junction Temperature Range  
65 to +200  
J
STG  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
AXIAL LEAD / DO41  
CASE 017AH  
MARKING DIAGRAM  
$Y  
85C  
1x  
&2  
$Y  
= Logo  
85C  
1x  
= Specific Device Code  
= Specific Device Code  
x = 0, 1, 2, 3, 5, 6  
&2  
= 2Digit Date Code Format  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
April, 2021 Rev. 3  
BZX85C3V3/D  

BZX85C6V8 替代型号

型号 品牌 替代类型 描述 数据表
1N5921BG ONSEMI

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