Datasheet > BZX85C30-B

BZX85C30-B

更新时间： 2024-11-25 03:13:55

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
6页	119K
描述
Zener Diode,

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中文翻译

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数据手册

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BZX85C30-B 数据手册

BZX85C2V7

THRU

BZX85C200

SILICON ZENER DIODE

2.7 to 200

1.3 Watts

Volts POWER

VOLTAGE

FEATURES

DO-41G

Low profile package

Built-in strain relief

Low inductance

High temperature soldering : 260°C /10 seconds

0.030(0.75)

0.026(0.65)

Glass package has Underwriters Laboratory Flammability Classification

In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA

• Case: Molded Glass DO-41G

0.107(2.7)

0.080(2.0)

• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026

guaranteed

• Polarity: Color band denotes positive end

• Mounting position:Any

• Weight: 0.012 ounce, 0.317 gram

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Power Dissipation at Tamb = 25 ^OC

Symbol

Value

1.3*

Units

TOT

Junction Temperature

-65 to +200

^OC

Storage Temperature Range

TSTG

*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.

Parameter

Symbol

Min.

Typ.

Max.

170

Units

Thermal Resistance Junction to Ambient Air

K/W

Forward Voltage at I_F= 200mA

V_F

1.2

Valid provided that leads at a distance of 10 mm from case are kept at ambient temperatur.e

2019-02/09

REV:O

12 3 4 5 6

中文翻译

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