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BZX84-C3V9/T3 PDF预览

BZX84-C3V9/T3

更新时间: 2024-11-29 19:13:03
品牌 Logo 应用领域
恩智浦 - NXP 测试光电二极管
页数 文件大小 规格书
16页 448K
描述
DIODE 3.9 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Voltage Regulator Diode

BZX84-C3V9/T3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.19
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.25 W认证状态:Not Qualified
标称参考电压:3.9 V最大反向电流:3 µA
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
电压温度Coeff-Max:最大电压容差:5%
工作测试电流:5 mABase Number Matches:1

BZX84-C3V9/T3 数据手册

 浏览型号BZX84-C3V9/T3的Datasheet PDF文件第2页浏览型号BZX84-C3V9/T3的Datasheet PDF文件第3页浏览型号BZX84-C3V9/T3的Datasheet PDF文件第4页浏览型号BZX84-C3V9/T3的Datasheet PDF文件第5页浏览型号BZX84-C3V9/T3的Datasheet PDF文件第6页浏览型号BZX84-C3V9/T3的Datasheet PDF文件第7页 
BZX84 series  
SOT23  
Voltage regulator diodes  
Rev. 5 — 18 September 2013  
Product data sheet  
1. Product profile  
1.1 General description  
Low-power voltage regulator diodes in a small SOT23 (TO-236AB) Surface-Mounted  
Device (SMD) plastic package.  
The diodes are available in the normalized E24 1 % (BZX84-A), 2 % (BZX84-B) and  
approximately 5 % (BZX84-C) tolerance range. The series includes 37 breakdown  
voltages with nominal working voltages from 2.4 V to 75 V.  
1.2 Features and benefits  
Total power dissipation: 250 mW  
Working voltage range:  
nominal 2.4 V to 75 V (E24 range)  
Three tolerance series: 1 %, 2 % and Non-repetitive peak reverse power  
approximately 5 %  
dissipation: 40 W  
AEC-Q101 qualified  
1.3 Applications  
General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
IF = 10 mA  
Tamb 25 °C  
Min  
Typ  
Max  
0.9  
Unit  
V
[1]  
[2]  
VF  
forward voltage  
total power dissipation  
-
-
-
-
Ptot  
250  
mW  
[1] Pulse test: tp 100 s;   0.02  
[2] Device mounted on a FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  

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