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BZX55C3V3 PDF预览

BZX55C3V3

更新时间: 2024-11-20 06:45:11
品牌 Logo 应用领域
EIC 稳压二极管测试
页数 文件大小 规格书
2页 31K
描述
SILICON ZENER DIODES

BZX55C3V3 数据手册

 浏览型号BZX55C3V3的Datasheet PDF文件第2页 
SILICON ZENER DIODES  
BZX55C2V4 ~ BZX55C200  
DO - 35  
VZ : 2.4 - 200 Volts  
PD : 500 mW  
1.00 (25.4)  
0.079(2.0 )max.  
min.  
0.150 (3.8)  
max.  
FEATURES :  
* Complete 2.4 to 200 Volts  
* High surge current capability  
* High peak reverse power dissipation  
* High reliability  
1.00 (25.4)  
0.020 (0.52)max.  
min.  
* Low leakage current  
Dimensions in inches and ( millimeters )  
MECHANICAL DATA  
* Case : Molded glass  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
* Polarity : Color band denotes cathode end. When operated in zener mode,  
cathode will be positive with respect to anode  
* Mounting position : Any  
* Weight : 0.13 gram  
MAXIMUM RATINGS  
°
Rating at 25 C ambient temperature unless otherwise specified  
Rating  
Power Dissipation (Note)  
Symbol  
Value  
Unit  
PD  
500  
mW  
Maximum Forward Voltage at IF =100 mA  
VF  
1.0  
V
q
Maximum Thermal Resistance Junction to Ambient Air (Note1)  
Junction Temperature Range  
R JA  
0.3  
K / mW  
°
Tj  
- 55 to + 175  
- 55 to + 175  
C
°
Ts  
Storage Temperature Range  
C
Note : 1. Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.  
UPDATE : JANUARY 18, 2002  

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