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BZX55C39 PDF预览

BZX55C39

更新时间: 2024-11-23 06:45:11
品牌 Logo 应用领域
威世 - VISHAY 二极管测试
页数 文件大小 规格书
6页 74K
描述
Silicon Epitaxial Planar Z-Diodes

BZX55C39 数据手册

 浏览型号BZX55C39的Datasheet PDF文件第2页浏览型号BZX55C39的Datasheet PDF文件第3页浏览型号BZX55C39的Datasheet PDF文件第4页浏览型号BZX55C39的Datasheet PDF文件第5页浏览型号BZX55C39的Datasheet PDF文件第6页 
BZX55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
l=4mm, T =25 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
L
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
l=4mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85605  
Rev. 4, 01-Apr-99  
www.vishay.de FaxBack +1-408-970-5600  
1 (6)  

BZX55C39 替代型号

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1N5256 EIC

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