BZX55C2V2

更新时间： 2024-02-09 22:50:32

品牌	Logo	应用领域
EIC		稳压二极管
页数	文件大小	规格书
2页	38K
描述
SILICON ZENER DIODES

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中文翻译

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数据手册

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BZX55C2V2 数据手册

SILICON ZENER DIODES

DO - 35

BZX55C2V0 ~ BZX55C100

V_Z: 2.0 - 100 Volts

P_D: 500 mW

1.00 (25.4)

0.079(2.0 )max.

min.

FEATURES :

0.150 (3.8)

max.

* Complete 2.0 to 100 Volts

* High surge current capability

* High peak reverse power dissipation

* High reliability

1.00 (25.4)

0.020 (0.52)max.

min.

* Low leakage current

* Pb / RoHS Free

Dimensions in inches and ( millimeters )

MECHANICAL DATA

* Case : Molded glass

* Lead : Axial lead solderable per MIL-STD-202,

method 208 guaranteed

* Polarity : Color band denotes cathode end. When operated in zener mode,

cathode will be positive with respect to anode

* Mounting position : Any

* Weight : 0.13 gram (approx.)

MAXIMUM RATINGS

Rating at 25 °C ambient temperature unless otherwise specified

Rating

Symbol

Value

Unit

P_D

Power Dissipation (Note1)

500

Maximum Forward Voltage at I_F=100 mA

Maximum Thermal Resistance Junction to Ambient Air (Note1)

Junction Temperature Range

V_F

1.0

°C/W

°C

300

RqJA

T_j

- 65 to + 200

T_s

Storage Temperature Range

°C

Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.

Page 1 of 2

Rev. 05 : June 25, 2005

中文翻译

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