Datasheet > BZX55C1V0

BZX55C1V0

更新时间： 2024-02-05 13:28:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	73K
描述
Silicon Epitaxial Planar ZvDiodes(70.93 k)

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中文翻译

获取价格

数据手册

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BZX55C1V0 数据手册

BZX55C...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

Applications

94 9367

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

l=4mm, T =25 C

Type

Symbol

Value

500

Unit

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

300

Unit

K/W

l=4mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85605

Rev. 4, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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