Datasheet > BZX55B

BZX55B

更新时间： 2024-11-09 06:45:11

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	72K
描述
Silicon Epitaxial Planar Z-Diodes

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中文翻译

获取价格

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BZX55B 数据手册

BZX55B...

Vishay Telefunken

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Low noise

Very high stability

Available with tighter tolerances

V –tolerance ± 2%

94 9367

Applications

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Power dissipation

Z–current

Junction temperature

Storage temperature range

Test Conditions

l=4mm, T =25 C

Type

Symbol

Value

500

Unit

P /V

175

–65...+175

stg

Maximum Thermal Resistance

T = 25 C

Parameter

Junction ambient

Test Conditions

Symbol

thJA

Value

300

Unit

K/W

l=4mm, T =constant

Electrical Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =100mA

Type

Symbol Min

Typ Max Unit

1.5

Document Number 85604

Rev. 3, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

1 (6)

12 3 4 5 6

中文翻译

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