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BZX384-C75D6 PDF预览

BZX384-C75D6

更新时间: 2024-11-20 20:57:07
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
9页 397K
描述
DIODE 74.5 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC, SO-2, Voltage Regulator Diode

BZX384-C75D6 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:SOD
包装说明:R-PDSO-G2针数:2
Reach Compliance Code:unknown风险等级:5.74
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:255 ΩJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.2 W认证状态:Not Qualified
标称参考电压:74.5 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:5%工作测试电流:2 mA
Base Number Matches:1

BZX384-C75D6 数据手册

 浏览型号BZX384-C75D6的Datasheet PDF文件第2页浏览型号BZX384-C75D6的Datasheet PDF文件第3页浏览型号BZX384-C75D6的Datasheet PDF文件第4页浏览型号BZX384-C75D6的Datasheet PDF文件第5页浏览型号BZX384-C75D6的Datasheet PDF文件第6页浏览型号BZX384-C75D6的Datasheet PDF文件第7页 
BZX384 Series  
Zener Diodes  
V Range 2.4V to 75V  
Z
Power Dissipation 200mW  
SOD-323  
.012 (0.3)  
Cathode Band  
Mounting Pad Layout  
Top View  
0.055  
(1.40)  
0.062  
(1.60)  
Dimensions in inches  
and (millimeters)  
.059 (1.5)  
.043 (1.1)  
.010 (0.25)  
min.  
Mechanical Data  
Features  
Case: SOD-323 Plastic Package  
• Silicon Planar Power Zener Diodes  
Weight: Approx. 0.004g  
• The Zener voltages are graded according to the  
international E 24 standard. Standard Zener voltage  
tolerance is ±5%. Replace “C” with “B” for ±2%  
tolerance. Other voltage tolerances and other  
Zener voltages are available upon request.  
Marking Code: See table on next page  
Packaging Codes/Options:  
D5 / 10K per 13” reel (8mm tape), 30K box  
D6 / 3K per 7” reel (8mm tape), 30K box  
Maximum Ratings and Thermal Characteristics(TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
mA  
Zener Current  
IZM  
250  
Power Dissipation at Tamb = 25°C  
Ptot  
200(1)  
mW  
Thermal Resistance  
Junction to Ambient Air  
RθJA  
650(2)  
°C/W  
Junction Temperature  
Tj  
150  
°C  
°C  
Storage Temperature Range  
TS  
65 to +150  
Notes: (1) Device on fiberglass substrate  
(2) Valid provided that electrodes are kept at ambient temperature  
6/5/01  

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