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BZX384-C12 PDF预览

BZX384-C12

更新时间: 2024-12-01 11:08:59
品牌 Logo 应用领域
安世 - NEXPERIA 测试光电二极管
页数 文件大小 规格书
14页 315K
描述
Voltage regulator diodesProduction

BZX384-C12 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.72Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:342160
Samacsys Pin Count:2Samacsys Part Category:Diode
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD323 (SC-76)
Samacsys Released Date:2016-07-07 10:04:08Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
参考标准:AEC-Q101; IEC-60134标称参考电压:12 V
表面贴装:YES技术:ZENER
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
最大电压容差:5%工作测试电流:5 mA
Base Number Matches:1

BZX384-C12 数据手册

 浏览型号BZX384-C12的Datasheet PDF文件第2页浏览型号BZX384-C12的Datasheet PDF文件第3页浏览型号BZX384-C12的Datasheet PDF文件第4页浏览型号BZX384-C12的Datasheet PDF文件第5页浏览型号BZX384-C12的Datasheet PDF文件第6页浏览型号BZX384-C12的Datasheet PDF文件第7页 
BZX384 series  
Voltage regulator diodes  
Rev. 4 — 1 January 2023  
Product data sheet  
1. General description  
Low-power voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD)  
plastic package.  
The diodes are available in the normalized E24 ±1 % (BZX384-A), ±2 % (BZX384-B) and  
approximately ±5 % (BZX384-C) tolerance range. The series includes 37 breakdown voltages with  
nominal working voltages from 2.4 V to 75 V.  
2. Features and benefits  
Total power dissipation: ≤300 mW  
Three tolerance series: ±1 %, ±2 % and approximately ±5 %  
Working voltage range: nominal 2.4 V to 75 V (E24 range)  
Non-repetitive peak reverse power dissipation: ≤ 40 W  
3. Applications  
General regulation functions  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
IF = 10 mA  
Tamb ≤ 25 °C  
Min  
[1] -  
[2] -  
Typ  
Max  
0.9  
Unit  
V
VF  
forward voltage  
total power dissipation  
-
-
Ptot  
300  
mW  
[1] Pulse test: tp ≤ 100 μs; δ ≤ 0.02.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
 
 
 
 
 

BZX384-C12 替代型号

型号 品牌 替代类型 描述 数据表
BZX384-C12,115 NXP

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