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BZW06-8V5B PDF预览

BZW06-8V5B

更新时间: 2024-11-25 22:25:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管IOT局域网
页数 文件大小 规格书
6页 175K
描述
TRANSIL

BZW06-8V5B 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-15
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.63
Is Samacsys:N其他特性:UL RECOGNIZED
最小击穿电压:9.5 V击穿电压标称值:10 V
外壳连接:ISOLATED最大钳位电压:18.6 V
配置:SINGLE最小二极管电容:1400 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-15JESD-30 代码:O-PALF-W2
JESD-609代码:e3最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:BIDIRECTIONAL
最大功率耗散:1.7 W认证状态:Not Qualified
最大重复峰值反向电压:8.6 V最大反向电流:10 µA
子类别:Transient Suppressors表面贴装:NO
技术:AVALANCHE端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BZW06-8V5B 数据手册

 浏览型号BZW06-8V5B的Datasheet PDF文件第2页浏览型号BZW06-8V5B的Datasheet PDF文件第3页浏览型号BZW06-8V5B的Datasheet PDF文件第4页浏览型号BZW06-8V5B的Datasheet PDF文件第5页浏览型号BZW06-8V5B的Datasheet PDF文件第6页 
BZW06-5V8/376  
BZW06-5V8B/376B  
®
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
STAND-OFF VOLTAGE RANGE :  
From 5.8V to 376 V  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
DO-15  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
600  
Unit  
W
Tj initial = Tamb  
amb = 75°C  
P
T
1.7  
W
IFSM  
Non repetitive surge peak forward current  
for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
100  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
175  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10s a 5mm  
from case.  
230  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Junction to leads  
Junction to ambient on printed circuit.  
Rth (j-a)  
Llead = 10 mm  
100  
February 2003 - Ed : 3A  
1/6  

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