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BZW04P342B-E3/54

更新时间： 2024-11-14 13:36:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 394K
描述
Trans Voltage Suppressor Diode, 342V V(RWM), Bidirectional,

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BZW04P342B-E3/54 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.84
击穿电压标称值：410 V最大钳位电压：548 V
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-609代码：e3
极性：BIDIRECTIONAL最大重复峰值反向电压：342 V
子类别：Transient Suppressors表面贴装：NO
端子面层：Matte Tin (Sn)Base Number Matches：1

BZW04P342B-E3/54 数据手册

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BZW04P-5V8 thru BZW04-376  
www.vishay.com  
Vishay General Semiconductor  
TransZorb® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate  
(duty cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
DO-204AL (DO-41)  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial and telecommunication.  
VWM  
5.8 V to 376 V  
PPPM  
400 W  
1.5 W  
40 A  
PD  
IFSM (uni-directional only)  
MECHANICAL DATA  
TJ max.  
175 °C  
Case: DO-204AL, molded epoxy over passivated chip  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use suffix (e.g.  
BZW04P-6V4B).  
Electrical characteristics apply in both directions.  
B
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Note  
BZW04-213(B) ~ BZW04-376(B) for commercial grade only  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (TA = 25 °C unles otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
PPPM  
400  
W
See next  
table  
Peak pulse current with a 10/1000 μs waveform (1)  
IPPM  
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
PD  
IFSM  
1.5  
40  
W
A
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)  
Operating junction and storage temperature range  
VF  
3.5/5.0  
- 55 to + 175  
V
TJ, TSTG  
°C  
Notes  
(1)  
(2)  
(3)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above  
Revision: 12-Jul-11  
Document Number: 88316  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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BZW04P342B-E3/54 替代型号

型号 品牌 替代类型 描述 数据表
BZW04-342B-E3/54 VISHAY

类似代替

 Trans Voltage Suppressor Diode, 400W, 342V V(RWM), Bidirectional, 1 Element, Silicon, DO-2

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