Datasheet > BZW04P26/E2

BZW04P26/E2

更新时间： 2022-12-01 22:06:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	73K
描述
Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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BZW04P26/E2 数据手册

BZW04P-5V8 thru BZW04-376

TRANSZORB^®Transient Voltage Suppressor

Peak Pulse Power 400W

Stand-off Voltage 5.8 to 376V

DO-204AL (DO-41 Plastic)

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

1.0 (25.4)

MIN.

• 400W peak pulse power capabililty with a 10/1000µs

waveform, repetition rate (duty cycle): 0.01%

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

0.107 (2.7)

0.080 (2.0)

DIA.

• Typical I less than 1µA above 10V rating

0.205 (5.2)

0.160 (4.1)

• High temperature soldering guaranteed:

265^OC/10 seconds, 0.375” (9.5mm) lead length,

5lbs. (2.3 kg) tension

Mechanical Data

Case: JEDEC DO-204AL molded plastic body over

passivated junction

1.0 (25.4)

MIN.

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

0.034 (0.86)

0.028 (0.71)

DIA.

Polarity: For unidirectional types the color band

denotes the cathode, which is positive with respect

to the anode under normal TVS operation

Dimensions in inches and (millimeters)

Mounting Position: Any

Weight: 0.012oz., 0.3g

Devices for Bidirectional Applications

For bi-directional use add suffix letter “B” (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

Packaging codes/options:

E2/4K per Ammo mag. (52 mm tape), 20K/box

E3/5K per 13” reel (52mm tape), 10K/box

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Minimum 400

See Next Table

1.0

Unit

Peak pulse power dissipation with a 10/1000µs waveform

(Note 1, Fig. 1)

P_PPM

Peak pulse current with a 10/1000µs waveform (Note 1)

I_PPM

Steady state power dissipation

P_M(AV)

at T_L= 75^OC, lead lengths 0.375” (9.5mm) (Note 2)

Peak forward surge current, 8.3ms

single half sine-wave superimposed on rated load

(JEDEC Method) unidirectional only (Note 3)

I_FSM

Maximum instantaneous forward voltage

at 25A for unidirectional only (Note 4)

V_F

3.5/5.0

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

°C

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

(3) Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum

(4) V_F= 3.5V for devices of V_(BR)< 220V, and V_F= 5.0 Volt max. for devices of V_(BR)> 220V

6/29/00

12 3 4

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与BZW04P26/E2相关器件

型号	品牌	获取价格	描述	数据表
BZW04P26/E3	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, Unidirectional, 1 Element, Silicon, DO-204AL, PLASTI
BZW04P26B	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
BZW04P26B	VISHAY	获取价格	TRANSZORB® Transient Voltage Suppressors
BZW04P26B	DBLECTRO	获取价格	MINI TYPE LED LAMPS
BZW04P26B	BL Galaxy Electrical	获取价格	TRANSIENT VOLTAGE SUPPRESSOR
BZW04P26B	LGE	获取价格	Transient Voltage Suppressor
BZW04P26B	TAYCHIPST	获取价格	Transient Voltage Suppressors
BZW04P26B	EIC	获取价格	Trans Voltage Suppressor Diode, 26V V(RWM), Bidirectional,
BZW04P26B	STMICROELECTRONICS	获取价格	400W, BIDIRECTIONAL, SILICON, TVS DIODE
BZW04P26B/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-

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