Datasheet > BZW04P26

BZW04P26

更新时间： 2024-11-19 06:45:07

品牌	Logo	应用领域
MDE		/
页数	文件大小	规格书
4页	71K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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BZW04P26 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414

1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com

BZW04 SERIES

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

VOLTAGE-6.8 TO 376 Volts

400 Watt Peak Pulse Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

• Glass passivated chip junction in DO-41 package

• 400W surge capability at 1ms

• Excellent clamping capability

• Low zener impedance

• Low incremental surge resistance

• Excellent clamping capability

• Fast response time: typically less than

1.0 ps from 0 volts to BV min

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

300°C/10 seconds/ .375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

MECHANICAL DATA

Case: JEDEC DO-41 Molded plastic

Terminals: Axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Dimensions in inches (millimeters)

Mounting Position: Any

Weight: 0.012 ounces, 0.3 grams

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA Suffix for types BZW-04-5V8 thru types BZW04-376 (e.g. BZW04-5V8B, BZW04-376B)

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For Capacitive load, derate current by 20%

RATING

SYMBOL

P_PPM

VALUE

Minimum 400

SEE TABLE 1

1.0

UNITS

Watts

Amps

Watts

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms

(NOTE 1)

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

lengths .375", 9.5mm (Note 2)

Ippm

Lead

P_M

(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

Operatings and Storage Temperature Range

NOTES:

I_FSM

Amps

°C

T_J, T_STG

-55 +175

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on Copper Pad area of 1.6x1.6" (40x40mm) per Fig.5.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

12 3 4

中文翻译

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与BZW04P26相关器件

型号	品牌	获取价格	描述	数据表
BZW04P26/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/23	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 25.6V V(RWM), Unidirectional,
BZW04P26/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
BZW04P26/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 25.6V V(RWM), Unidirectional,
BZW04P26/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 25.6V V(RWM), Unidirectional, 1 Element, Silicon, DO

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