5秒后页面跳转
BZW04P256 PDF预览

BZW04P256

更新时间: 2024-11-19 00:01:27
品牌 Logo 应用领域
EIC 瞬态抑制器二极管
页数 文件大小 规格书
5页 59K
描述
TRANSIENT VOLTAGE SUPPRESSOR

BZW04P256 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.28
Is Samacsys:N击穿电压标称值:300 V
最大钳位电压:414 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
极性:UNIDIRECTIONAL最大重复峰值反向电压:256 V
子类别:Transient Suppressors表面贴装:NO
Base Number Matches:1

BZW04P256 数据手册

 浏览型号BZW04P256的Datasheet PDF文件第2页浏览型号BZW04P256的Datasheet PDF文件第3页浏览型号BZW04P256的Datasheet PDF文件第4页浏览型号BZW04P256的Datasheet PDF文件第5页 
TRANSIENT VOLTAGE  
SUPPRESSOR  
BZW04 SERIES  
VBR : 6.8 - 440 Volts  
PPK : 400 Watts  
DO - 41  
1.00 (25.4)  
FEATURES :  
0.107 (2.74)  
MIN.  
* 400W surge capability at 1ms  
* Excellent clamping capability  
* Low zener impedance  
* Fast response time : typically less  
then 1.0 ps from 0 volt to VBR(min)  
* Typical IR less then 1mA above 10V  
0.080 (2.03)  
0.205 (5.20)  
0.160 (4.10)  
1.00 (25.4)  
MIN.  
0.034 (0.86)  
0.028 (0.71)  
MECHANICAL DATA  
* Case : DO-41 Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
method 208 guaranteed  
Dimensions in inches and (millimeters)  
* Polarity : Color band denotes cathode end except Bipolar.  
* Mounting position : Any  
* Weight : 0.339 gram  
DEVICES FOR BIPOLAR APPLICATIONS  
For bi-directional use B Suffix.  
Electrical characteristics apply in both directions  
MAXIMUM RATINGS  
Rating at 25 °C ambient temperature unless otherwise specified.  
Rating  
Symbol  
Value  
Unit  
Peak Power Dissipation at Ta = 25 °C, Tp=1ms (Note1)  
Steady State Power Dissipation at TL = 75 °C  
Lead Lengths 0.375", (9.5mm) (Note 2)  
PPK  
Minimum 400  
Watts  
PD  
1.0  
Watt  
Peak Forward Surge Current, 8.3ms Single Half  
Sine-Wave Superimposed on Rated Load  
(JEDEC Method) (Note 3)  
IFSM  
40  
Amps.  
Operating and Storage Temperature Range  
TJ, TSTG  
- 65 to + 175  
°C  
Note :  
(1 ) Non-repetitive Current pulse, per Fig. 5 and derated above Ta = 25 °C per Fig. 1  
(2) Mounted on Copper Leaf area of 1.57 in2 (40mm2).  
(3) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minutes maximum.  
UPDATE : MAY 18, 1998  

与BZW04P256相关器件

型号 品牌 获取价格 描述 数据表
BZW04P256/100 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/4E VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/4F VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/4G VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/4H VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/51 VISHAY

获取价格

Trans Voltage Suppressor Diode, 256V V(RWM), Unidirectional,
BZW04P256/53 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/54 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/56 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P256/58 VISHAY

获取价格

Trans Voltage Suppressor Diode, 400W, 256V V(RWM), Unidirectional, 1 Element, Silicon, DO-