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BZW04P256B PDF预览

BZW04P256B

更新时间: 2024-11-01 06:45:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 106K
描述
TRANSZORB® Transient Voltage Suppressors

BZW04P256B 数据手册

 浏览型号BZW04P256B的Datasheet PDF文件第2页浏览型号BZW04P256B的Datasheet PDF文件第3页浏览型号BZW04P256B的Datasheet PDF文件第4页浏览型号BZW04P256B的Datasheet PDF文件第5页浏览型号BZW04P256B的Datasheet PDF文件第6页 
BZW04P-5V8 thru BZW04-376  
Vishay General Semiconductor  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Availablein uni-directionaland bi-directional  
• 400 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• Solder dip 260 °C, 40 s  
DO-204AL (DO-41)  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and  
lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
VWM  
5.8 V to 376 V  
PPPM  
400 W  
1.5 W  
40 A  
PD  
IFSM (uni-directional only)  
TJ max.  
175 °C  
MECHANICAL DATA  
Case: DO-204AL, molded epoxy over passivated chip  
Molding compound meets UL 94 V-0 flammability  
rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, high reliability/  
automotive grade (AEC Q101 qualified)  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use  
BZW04P-6V4B).  
B
suffix (e.g.  
Electrical characteristics apply in both directions.  
E3 suffix meets JESD 201 class 1A whisker test, HE3  
suffix meets JESD 201 class 2 whisker test  
Note: BZW04-213(B) ~ BZW04-376(B) for commercial grade only  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
UNIT  
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1)  
400  
W
See next table  
1.5  
A
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 5)  
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 25 A for uni-directional only (3)  
Operating junction and storage temperature range  
PD  
W
IFSM  
40  
A
VF  
3.5/5.0  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3) VF = 3.5 V for BZW04P(-)188 and below; VF = 5.0 V for BZW04P(-)213 and above  
Document Number: 88316  
Revision: 22-Oct-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

BZW04P256B 替代型号

型号 品牌 替代类型 描述 数据表
P4KE300C-HE3/54 VISHAY

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400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
P4KE300C-G COMCHIP

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