Datasheet > BZW04P-5V8

BZW04P-5V8

更新时间： 2024-11-21 00:01:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	63K
描述
TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BZW04P-5V8 数据手册

BZW04P-5V8 THRU BZW04-376

TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR

Stand-off Voltage - 5.8 to 376 Volts

Peak Pulse Power - 400 Watts

FEATURES

♦ Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

♦ Glass passivated chip junction

♦ 400W peak pulse power

DO204AL

capability with a 10/1000µs waveform,

repetition rate (duty cycle): 0.01%

♦ Excellent clamping

capability

♦ Low incremental surge resistance

♦ Fast response time: typically less

1.0 (25.4)

MIN.

0.107 (2.7)

0.080 (2.0)

DIA.

0.205 (5.2)

0.160 (4.1)

than 1.0 ps from 0 Volts to V

for uni-

(BR)

directional and 5.0ns for bi-directional types

♦ Typical I less than 1µA above 10V rating

♦ High temperature soldering guaranteed:

265°C/10 seconds, 0.375" (9.5mm) lead length,

5lbs. (2.3 kg) tension

1.0 (25.4)

MIN.

0.034 (0.86)

0.028 (0.71)

DIA.

MECHANICAL DATA

Case: JEDEC DO-204AL molded plastic over passivated

junction

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix "E" part numbers

Terminals: Plated axial leads, solderable per MIL-STD-750,

Method 2026

Polarity: For unidirectional types the color band denotes

the cathode, which is postitive with respect to the anode

under normal TVS operation

Dimensions are in inches

and

(millimeters)

Mounting Position: Any

Weight: 0.012 ounce, 0.3 gram

DEVICES FOR BIDIRECTIONAL APPLICATIONS

For bi-directional use add suffix Letter "B" (e.g. BZW04P-6V4B).

Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOL

VALUE

UNITS

Peak pulse power dissipation with a 10/1000µs waveform

(NOTE 1, FIG. 1)

P_PPM

Minimum 400

Watts

Peak pulse current with a 10/1000µs waveform

(NOTE 1)

I_PPM

Amps

Watts

SEE TABLE 1

Steady state power dissipation at T_L=75°C

lead lengths, 0.375” (9.5mm) _{(NOTE 2)}

P_M(AV)

1.0

Peak forward surge current, 8.3ms single half

Sine-wave superimposed on rated load

(JEDEC Method) _{(NOTE 3)}unidirectional only

I_FSM

40.0

Amps

Maximum instantaneous forward voltage at 25A

_{(NOTE 4)}uni-directional only

V_F

3.5/5.0

Volts

°C

Operating junction and storage temperature range

T_J, T_STG

-55 to +175

NOTES:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A=25°C per Fig. 2

(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5

(3) 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum

(4) V_F=3.5V max. for devices of V_(BR)≤220V and V_F=5.0 Volt max. for devices of V_(BR)>220V

1/5/98

12 3 4 5

中文翻译

下载PDF

与BZW04P-5V8相关器件

型号	品牌	获取价格	描述	数据表
BZW04P5V8/100	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/23	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/4E	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/4F	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/4G	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/4H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5.8V V(RWM), Unidirectional,
BZW04P5V8/53	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/54	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-
BZW04P5V8/56	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 5.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与BZW04P-5V8相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P-5V8

BZW04P-5V8 数据手册

与BZW04P-5V8相关器件

与BZW04P-5V8相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

BZW04P-5V8

BZW04P-5V8 数据手册

与BZW04P-5V8相关器件

与BZW04P-5V8相关文章

您还可以找

您在本页遇到什么问题？