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BZV55-C11T/R PDF预览

BZV55-C11T/R

更新时间: 2024-11-16 03:24:59
品牌 Logo 应用领域
恩智浦 - NXP 二极管齐纳二极管
页数 文件大小 规格书
13页 410K
描述
DIODE 11 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Voltage Regulator Diode

BZV55-C11T/R 数据手册

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BZV55 series  
Voltage regulator diodes  
Rev. 5 — 26 January 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C  
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized  
E24 2 % (BZV55-B) and approximately 5 % (BZV55-C) tolerance range.  
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.  
1.2 Features and benefits  
Non-repetitive peak reverse power  
dissipation: 40 W  
Wide working voltage range:  
nominal 2.4 V to 75 V (E24 range)  
Total power dissipation: 500 mW  
Two tolerance series: 2 % and 5 %  
Low differential resistance  
Small hermetically sealed glass  
SMD package  
1.3 Applications  
General regulation functions  
1.4 Quick reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
0.9  
40  
Unit  
V
VF  
forward voltage  
IF = 10 mA  
-
-
-
-
[1]  
PZSM  
non-repetitive peak  
W
reverse power dissipation  
[1] tp = 100 s; square wave; Tj = 25 C prior to surge  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Graphic symbol  
[1]  
k
a
2
anode  
2
1
006aaa152  
[1] The marking band indicates the cathode.  

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