Datasheet > BZT55A3V9

BZT55A3V9

更新时间： 2024-11-16 03:32:03

品牌	Logo	应用领域
TEMIC		/
页数	文件大小	规格书
6页	96K
描述
Zener Diode, 3.9V V(Z), 1%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

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BZT55A3V9 数据手册

BZT55C...

Silicon Epitaxial Planar Z–Diodes

Features

Very sharp reverse characteristic

Low reverse current level

Very high stability

Low noise

Available with tighter tolerances

Applications

96 12009

Voltage stabilization

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

300K/W

Type

Symbol

Value

500

Unit

Power dissipation

Z–current

thJA

P /V

Junction temperature

Storage temperature range

175

stg

–65...+175

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

on PC board 50mmx50mmx1.6mm

Symbol

Value

500

Unit

K/W

Junction ambient

thJA

Characteristics

T = 25 C

Parameter

Forward voltage

Test Conditions

I =200mA

Type

Symbol

Min

Typ

Max

1.5

Unit

TELEFUNKEN Semiconductors

1 (6)

Rev. A2, 24-Jun-96

12 3 4 5 6

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