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BZT55A2V7GS08 PDF预览

BZT55A2V7GS08

更新时间: 2024-11-14 20:49:07
品牌 Logo 应用领域
威世 - VISHAY 测试二极管
页数 文件大小 规格书
6页 153K
描述
Zener Diode, 2.7V V(Z), 1%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2

BZT55A2V7GS08 技术参数

生命周期:Obsolete零件包装代码:MELF
包装说明:O-LELF-R2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.8
Is Samacsys:N其他特性:LOW NOISE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JESD-30 代码:O-LELF-R2元件数量:1
端子数量:2封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:2.7 V
表面贴装:YES技术:ZENER
端子形式:WRAP AROUND端子位置:END
最大电压容差:1%工作测试电流:5 mA
Base Number Matches:1

BZT55A2V7GS08 数据手册

 浏览型号BZT55A2V7GS08的Datasheet PDF文件第2页浏览型号BZT55A2V7GS08的Datasheet PDF文件第3页浏览型号BZT55A2V7GS08的Datasheet PDF文件第4页浏览型号BZT55A2V7GS08的Datasheet PDF文件第5页浏览型号BZT55A2V7GS08的Datasheet PDF文件第6页 
BZT55C...  
Vishay Telefunken  
Silicon Epitaxial Planar Z–Diodes  
Features  
Very sharp reverse characteristic  
Low reverse current level  
Very high stability  
Low noise  
Available with tighter tolerances  
96 12009  
Applications  
Voltage stabilization  
Order Instruction  
Type  
BZT55C2V4  
Ordering Code  
BZT55C2V4–GS08  
BZT55C2V4–GS18  
Remarks  
Tape and Reel (2.500 pcs)  
Tape and Reel (10.000 pcs)  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
R
300K/W  
P
V
thJA  
I
Z
P /V  
V
Z
T
175  
–65...+175  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
on PC board 50 mmx50 mmx1.6 mm  
Symbol  
R
thJA  
Value  
500  
Unit  
K/W  
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
1.5  
V
F
V
F
Document Number 85601  
Rev. 4, 12-Mar-01  
www.vishay.com  
1 (6)  

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