Datasheet > BZT55_12

BZT55_12

更新时间： 2024-11-14 09:04:39

品牌	Logo	应用领域
威世 - VISHAY		二极管齐纳二极管
页数	文件大小	规格书
7页	119K
描述
Small Signal Zener Diodes

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中文翻译

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数据手册

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BZT55_12 数据手册

BZT55-Series

Vishay Semiconductors

www.vishay.com

Small Signal Zener Diodes

FEATURES

• Very sharp reverse characteristic

• Low reverse current level

• Very high stability

• Low noise

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

APPLICATIONS

• Voltage stabilization

PRIMARY CHARACTERISTICS

PARAMETER

V_Zrange nom.

Test current I_ZT

V_Zspecification

Int. construction

VALUE

2.4 to 75

2.5 to 5

UNIT

Pulse current

Single

ORDERING INFORMATION

DEVICE NAME

ORDERING CODE

BZT55-series-GS18

BZT55-series-GS08

TAPED UNITS PER REEL

10 000 per 13" reel

2500 per 7" reel

MINIMUM ORDER QUANTITY

BZT55-series

10 000/box

12 500/box

BZT55-series

PACKAGE

MOLDING COMPOUND MOISTURE SENSITIVITY

SOLDERING

CONDITIONS

PACKAGE NAME

WEIGHT

34 mg

FLAMMABILITY RATING

LEVEL

MSL level 1

QuadroMELF SOD-80

UL 94 V-0

260 °C/10 s at terminals

(according J-STD-020)

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Power dissipation

Zener current

TEST CONDITION

SYMBOL

VALUE

UNIT

R_thJA 300 K/W

P_tot

I_Z

500

P_V/V_Z

On PC board

50 mm x 50 mm x 1.6 mm

Junction to ambient air

R_thJA

500

K/W

Junction temperature

T_j

T_stg

V_F

175

- 65 to + 175

1.5

°C

Storage temperature range

Forward voltage (max.)

I_F= 200 mA

Rev. 1.7, 22-Nov-11

Document Number: 85637

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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