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BZT52C9V1S PDF预览

BZT52C9V1S

更新时间: 2024-11-14 12:26:59
品牌 Logo 应用领域
戈采 - FCI 稳压二极管
页数 文件大小 规格书
3页 98K
描述
200mW SURFACE MOUNT ZENER DIODE

BZT52C9V1S 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.79Is Samacsys:N
Base Number Matches:1

BZT52C9V1S 数据手册

 浏览型号BZT52C9V1S的Datasheet PDF文件第2页浏览型号BZT52C9V1S的Datasheet PDF文件第3页 
Description  
Mechanical Dimensions  
SOD-323  
DIMENSIONS IN MM  
Features:  
Power dissipation: Pd: 200mW (tamb=25C)  
Forward Voltage: Vf: 0.9V  
Operating and storage junction temp. range: Tj, Tstg: -55C to +150C  
Maximum ratings (Tamb=25C unless otherwise specified)  
Characteristic  
Forward Voltage (note 2) @If=10mA  
Power issipation (note 1)  
Thermal Resistance Junction to Ambien RjA  
Operating and Storage Temp. Range  
Symbol  
Vf  
Value  
0.9  
200  
625  
Unite  
V
mW  
C/W  
C
Pd  
Tj, Tstg -65~+150  
Note 1: Vald provided that device terminals are kept at ambient temp.  
Note 2: Shart duration test pulse used in minimize self-hearing effect.  
Note 3: f=1KHZ  

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