Datasheet > BZT52C3V3S

BZT52C3V3S

更新时间： 2023-12-06 20:01:52

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6页	400K
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BZT52C3V3S 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd

Silicon Planar Zener Diodes：BZT52CxxxS Series

Rev.1.1

FEATURE

 Total power dissipation :max 200mW.

 Small plastic package suitable for surface mounted design.

 High reliability.

SOD-323

Symbol

DESCRIPTION

 Silicon planar zener diode in a small plastic.

 SMD SOD-323 package.

ABSOLUTE MAXIMUM RATINGS AND THERMAL CHARACTERISTICS

Parameter

Symbol

P_D

Max Value

Unit

℃/W

℃

Total power dissipation @T_A=25℃

Thermal resistance junction to ambient

Junction temperature range

200

R_θJA

T_j

625

-55 to+150

Storage temperature range

T_S

℃

ELECTRICAL CHARACTERISTICS (T_A=25℃)

Symbol

V_Z

Parameter

Reverse zener voltage at I_ZT

Reverse current

I_ZT

Z_ZT

I_R

Maximum zener impedance at I_ZT

Reverse leakage current at V_R

Reverse voltage

V_R

I_F

Forward current

V_F

Forward voltage at I_F

Zener voltage regulator

TEL：+86-513-83639777

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http://www.jjwdz.com

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