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BZT52C12-D3 PDF预览

BZT52C12-D3

更新时间: 2024-11-29 14:29:27
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
10页 431K
描述
DIODE 12 V, 0.41 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-2, Voltage Regulator Diode

BZT52C12-D3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.09配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
最大动态阻抗:20 ΩJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:0.41 W认证状态:Not Qualified
标称参考电压:12 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
最大电压容差:5%工作测试电流:5 mA
Base Number Matches:1

BZT52C12-D3 数据手册

 浏览型号BZT52C12-D3的Datasheet PDF文件第2页浏览型号BZT52C12-D3的Datasheet PDF文件第3页浏览型号BZT52C12-D3的Datasheet PDF文件第4页浏览型号BZT52C12-D3的Datasheet PDF文件第5页浏览型号BZT52C12-D3的Datasheet PDF文件第6页浏览型号BZT52C12-D3的Datasheet PDF文件第7页 
BZT52 Series  
Vishay Semiconductors  
VISHAY  
Zener Diodes  
Features  
• Silicon Planar Power Zener Diodes  
• These diodes are also available in other case  
styles and other configurations including: the  
SOT-23 case with type designation BZX84 series,  
the dual zener diode common anode configuration  
in the SOT-23 case with type designation AZ23  
series and the dual zener diode common cathode  
configuration in the SOT-23 case with type desig-  
nation DZ23 series.  
17431  
• The Zener voltages are graded according to the  
international E 24 standard. Standard Zener volt-  
age tolerance is 5 ꢀ. Replace suffix "C" with "B"  
for 2 ꢀ tolerance. Other tolerances and other  
Zener voltages are available upon request.  
Mechanical Data  
Case: SOD-123 Plastic Case  
Weight: approx. 10 mg  
Packaging Codes/Options:  
D3 / 10 K per 13 " reel (8 mm tape)  
D4 / 3 K per 7 " reel (8 mm tape)  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
mW  
Zener current see table " Characteristics "  
Power dissipation  
1)  
P
tot  
410  
1)  
2
Diode on ceramic substrate 0.7 mm; 2.5 mm area  
Maximum Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to  
ambient air  
R
°C/W  
θJA  
300  
Junction temperature  
T
150  
°C  
°C  
J
Storage temperature range  
T
- 65 to + 150  
S
1)  
Valid provided that electrodes are kept at ambient temperature  
Document Number 85760  
Rev. 2, 01-Jul-03  
www.vishay.com  
1

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